Photoelectric converter

ABSTRACT

A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n +  collector region an n -  region disposed contiguous to the collector region, a p base region disposed contiguous to the n -  region, an n +  emitter region disposed contiguous to the base region, and a first electrode connected to the emitter region; and a storage capacitor constituted by the base region, an electrically insulating region disposed contiguous to the base region, and a second electrode connected to the electrically insulating region; whereby the base region is held in a floating state. A photogenerated charge is stored in the base region by controlling the potential of the base region and an electric signal corresponding to the charge stored in the base region is subsequently output from the first electrode.

BACKGROUND OF THE INVENTION

The present invention relates to a photoelectric converter.

Recently, studies on photoelectric converters, especially solid stateimage pickup devices, have been widely conducted as semiconductortechnologies advance, and some of them have already become available.

These image pickup devices are mainly classified into those of CCD(Charge Coupled Device) type and those of MOS (Metal-Oxide-SemiconductorDevice) type. For instance, the CCD type image pickup devices generallyadopt the operation principle featured by forming potential wells belowMOS capacitor electrodes, storing charge produced in response toincident light, and, in a readout period, sequentially shifting thesepotential wells in accordance with pulses to transfer the stored chargeson an output amplifier to read out them. In another CCD type imagepickup device, light-receiving areas are formed by junction diodes, andtransfer areas are formed by CCD structures. On the other hand, the MOStype image pickup devices adopt the operational principle featured bystoring charges produced in response to incident light in respectivephotodiodes comprising pn junctions constituting light-receiving areas,and, in a readout period, reading out stored charges to an outputamplifier by sequentially turning on MOS switching transistorsrespectively connected to photodiodes.

The CCD type image pickup devices are of a relatively simplifiedstructure and, when viewed from the point of noise, only capacitance ofa charge detector provided at the final stage, originating from floatingdiffusion, affects random noise. Accordingly, the CCD image pickupdevices have relatively low noise characteristics and are capable ofoperating at low illumination. However, because of restriction ofprocesses for producing CCD type image pickup devices, a MOS typeamplifier serving as an output amplifier is provided on a chip and it islikely that visually noticeable 1/f noise occurs from interfaces betweensilicon and a film of SiO₂. Accordingly, although such a noise isrelatively low, there exists a limitation on their performance. Further,if an attempt is made to increase the number of cells, and pack themwith a high density for the purpose of performing high resolutionpickup, the maximum charge storage capacity of a potential welldecreases, failing to maintain a desired dynamic range. Accordingly,this will result in a big problem when solid state image pickup devicesof high resolution are realized in the future. Moreover, as the CCD typeimage pickup devices are formed to transfer stored charges bysequentially shifting potential wells, even if there exists a defect inonly one cell, the charge transfer is stopped thereat or the efficiencythereof is greatly lowered, whereby it is difficult to increaseproduction yield.

On the contrary, the MOS type image pickup devices, while they aresomewhat complicated in structure as compared with the CCD type imagepickup devices, particularly, the frame transfer type devices, can be soconstituted that they will have a large storage capacity and a widedynamic range. Further, even if there is a defect in one cell, theinfluence of the defect does not spread over the other cells because anX-Y addressing scheme is employed, whereby a high production yield isattained. However, in the MOS type image pickup devices, at the signalreadout stage, wiring capacitance is connected to each photodiode, andthere occurs an extremely large signal voltage drop, resulting in a lowoutput voltage. Furthermore, noticeable random noise occurs due to alarge wiring capacitance and fixed pattern noise occurs due to variationof parasitic capacitance existing in respective photodiodes and MOSswitching transistors for horizontal scanning. Because of these andother difficulties, the MOS type image pickup devices have drawbackssuch that it is difficult to take a picture at a low illumination, incontrast to the CCD type image pickup devices.

Further, when an attempt is made to realize high resolution image pickupdevices in the future, it is expected that the dimension of each cellwill be reduced and a charge stored therein will decrease. On thecontrary, the wiring capacity determined by a chip size can not belowered substantially, even if the line width becomes small.Accordingly, the MOS type image pickup devices will be furtherdisadvantageous in respect of S/N ratio.

Although the CCD type and MOS type image pickup devices have bothadvantages and drawbacks described above, they are gradually approachinga practically usable level. However, they have essential problems inrealizing the still higher resolutions required in the future.

Meanwhile, there have been proposed novel solid-state image pickupdevices as disclosed in Japanese Laid Open Patent Applications Nos.56-150878, 56-157073 and 56-165473, all entitled "Semiconductor ImagePickup Device". While the conventional CCD and MOS type image pickupdevices are based on the principle that charge generated in response tothe incident light is stored in a main electrode (for instance, thesource of a MOS transistor), those novel image pickup devices are basedon the principle that charge generated in response to the incident lightis stored in a control electrode (for instance, the base of a bipolartransistor or the gate of an SIT (static induction transistor) or MOStransistor in such a way that the flowing current is controlled inresponse to the charge generated in response to the incident light. Thatis, in the conventional CCD or MOS type image pickup devices, the storedcharge per se is read out to the exterior, whereas, in those novel imagepickup devices, each cell has an amplification capability so that theamplified signal is read out by charge amplification. In other words,the stored charge is read out as a low impedance output by the impedanceconversion. As a result, the newly proposed image pickup devices havevarious advantages such as a high output, a wide dynamic range, and lownoise and moreover that the nondestructive readout is possible becausethe carrier (charge) excited in response to the light or light image isstored in a control electrode. Furthermore, they can be improved in thefuture in such a way that they will have a higher degree of resolution.

However, these newly proposed image pickup devices fundamentally adoptan X-Y address scheme and have a fundamental cell structure comprising acell of the conventional MOS type image pickup device and an amplifierelement such as a bipolar transistor or SIT. As a result, they arecomplicated in construction and even though they have a possibility ofexhibiting a higher degree of resolution, there exists a limit to theirresolution capability at their present stage of evolution.

SUMMARY OF THE INVENTION

In view of the above, a principal object of the present invention is toprovide a novel photoelectric converter which is very simple inconstruction while each cell thereof has its own amplification functionand which can be adapted for a higher degree of resolution in thefuture.

According to a broad aspect of the invention, there is provided aphotoelectric converter comprising a photosensor element, saidphotosensor element comprising:

a transistor including

a first semiconductor region having a first conductivity type,

a second semiconductor region disposed contiguous to the firstsemiconductor region, the second semiconductor region having the sameconductivity type as that of and a lower impurity concentration thanthat of the first semiconductor region,

a third semiconductor region disposed contiguous to the secondsemiconductor region, the third semiconductor region having a differentconductivity type from that of the second semiconductor region,

a fourth semiconductor region disposed contiguous to the thirdsemiconductor region, the fourth semiconductor region having a differentconductivity type from that of the third semiconductor region, and

a first electrode connected to the fourth semiconductor region; and

a storage capacitor constituted by

said third semiconductor region,

an electrically insulating region disposed contiguous to the thirdsemiconductor region, and

a second electrode connected to the electrically insulating region;

whereby said third semiconductor region is in a floating state so thatthe third semiconductor region is adapted for storing a charge generatedby photoexcitation by controlling the potential of the thirdsemiconductor region through said electrically insulating region, and anelectric signal corresponding to the charge stored in the thirdsemiconductor region is output from said first electrode.

According to another broad aspect of the invention, there is provided aphotoelectric conversion process comprising the steps of

(A) providing a photoelectric converter as defined above; and

(B) sequentially and cyclically conducting the following stages ofoperations;

(a) Charge Storage Operation, comprising

setting the following initial conditions wherein:

the first semiconductor region is held at a reverse polarity of voltage,

the third semiconductor region is biased to a reverse polarity ofvolgage, and

the fourth semiconductor region is grounded or floated, and illuminatingthe photosensor element with incident light to store a chargecorresponding to the incident light in the third semiconductor region,

(b) Readout Operation, comprising

holding the fourth semiconductor region in a floating state and forwardbiasing the third semiconductor region to output an electrical signalcorresponding to the charge in the third semicoductor region; and

(c) Refreshing Operation, comprising

holding the first semiconductor region at a ground potential or areverse polarity of voltage,

holding the fourth semiconductor region at a ground potential, and

applying a forward polarity of voltage to the third semiconductor regionto remove a charge remaining corresponding to the photogenerated chargein the third semiconductor region.

Herein, the term "a forward polarity of voltage" is used to mean "apositive voltage" with respect to a p-type semiconductor region and "anegative voltage" to an n-type semiconductor region, whereas the term "areverse polarity of voltage" means "a negative voltage" to a p-typesemiconductor region and "a positive voltage" to an n-type semiconductorregion. In determining the polarity of voltage, an i-type semiconductorregion is regarded as a p-type semiconductor region when it is used incombination with an n-type semiconductor region and an n-typesemiconductor region when combined with a p-type semiconductor region.

These and other objects, features and advantages of the presentinvention will become more apparent upon a consideration of thefollowing description of the preferred embodiments of the presentinvention taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-6 are views for illustrating the essential construction and thefundamental mode of opertion of a first embodiment of the presentinvention;

FIG. 1(a) is a plan view thereof;

FIG. 1(b) is a sectional view thereof;

FIG. 1(c) is a diagram of an equivalent circuit thereof;

FIG. 2 shows an equivalent circuit in the case of the readout operation;

FIG. 3 is a graph showing the relationship between the readout time andthe readout voltage;

FIG. 4(a) is a graph showing the relationship between the storagevoltage and the readout time;

FIG. 4(b) is a graph showing the bias voltage and the readout time;

FIG. 5 is a diagram of an equivalent circuit in the case of therefreshing operation;

FIGS. 6(a) and 6(b) are graphs each showing the relationship between therefreshing time and the base potential;

FIG. 6(c) is a graph showing the relationship between the refreshingvoltage and the base potential;

FIG. 7 is a circuit diagram of a photoelectric converter consisting of aplurality of photosensor cells of the type as shown in FIG. 1;

FIG. 8(a) is a pulse timing diagram used to explain the mode ofoperation thereof;

FIG. 8(b) is a graph showing the potential levels in respectiveoperations;

FIG. 9 shows an equivalent circuit used to explain how an output signalis derived;

FIG. 10 is a graph showing the relationship between the output voltageand the time elapsed after the photoelectric converter is turned on;

FIGS. 11, 12 and 13 show circuit diagrams, respectively, ofphotoelectric converters which are modifications of the photoelectricconverter as shown in FIG. 7;

FIG. 14 is a plan view of a photosensor cell which is a modification ofthe photosensor cell shown in FIG. 1;

FIG. 15 consisting of FIGS. 15(a) and 15(b) is a circuit diagram of aphotoelectric converter consisting of photosensor cells as shown in FIG.14;

FIG. 16 consisting of FIGS. 16(a) through 16 (g), and FIG. 17 aresectional views used to explain a method for fabricating a photoelectricconverter in accordance with the present invention;

FIG. 18(a) is a sectional view of another embodiment of the photosensorcell in accordance with the present invention;

FIG. 18(b) shows an equivalent circuit thereof;

FIG. 18(c) shows a potential level used to explain the mode of operationof the photosesor cell as shown in FIG. 18(a);

FIG. 19 is a sectional view showing the essential structure of amodification of the photosensor cell shown in FIG. 18;

FIG. 20(a) is a sectional view of a further embodiment of thephotosensor cell in accordance with the present invention;

FIG. 20(b) shows an equivalent circuit thereof;

FIG. 21(a) is a sectional view of a further embodiment of thephotosensor cell in accordance with the present invention;

FIG. 21(b) shows an equivalent circuit thereof;

FIG. 22 is a circuit diagram of a photoelectric converter consisting ofphotosensor cells of the type as show in FIG. 21;

FIG. 23(a) is a plan view of a further embodiment of a photosensor cellin accordance with the present invention;

FIG. 23(b) is a sectional view taken along the line A--A' of FIG. 23(a);

FIG. 23(c) shows an equivalent circuit of the photosensor cell shown inFIG. 23(a);

FIG. 24(a) is a plan view of a further embodiment of the photosensorcell in accordance with the present invention;

FIG. 24(b) is a sectional view taken along the line A--A' of FIG. 24(a);

FIG. 24(c) shows an equivalent circuit thereof;

FIG. 24(d) shows a potential distribution therein;

FIG. 25 is a circuit diagram of a photoelectric converter consisting ofa plurality of photosensor cells of the type shown in FIG. 24;

FIG. 26 is a view used to explain the mode of operation thereof;

FIG. 27(a) is a plan view of a further embodiment of a photosensor cellin accordance with the present invention;

FIG. 27(b) is a sectional view taken along the line A--A' of FIG. 27(a);

FIG. 27(c) shows an equivalent circuit thereof;

FIG. 28 is a circuit diagram of a photoelectric converter consisting ofphotosensor cells of the type shown in FIG. 27;

FIG. 29 is a view used to explain the mode of operation thereof;

FIG. 30 shows an equivalent circuit of a modification of thephotoelectric converter of the type shown in FIG. 28;

FIG. 31 is a circuit diagram of a photoelectric converter consisting ofphotosensor cells as shown in FIG. 27;

FIG. 32 is a view used to explain the mode of operation thereof;

FIG. 33(a) is a plan view of a photosensor cell in accordance with thepresent invention with part of the cell moved;

FIG. 33(b) is a sectional view taken along the line A--A' of FIG. 33(a);

FIG. 33 (c) is an equivalent circuit of the two-dimensional arrangementof photosensor cells as shown in FIG. 33(a) and (b ).

FIG. 34, 35 and 36 show modifications, respectively, of one cell of theequivalent circuit shown in FIG. 33(c).

DESCRIPTION OF PREFERRED EMBODIMENTS

FIGS. 1 are views used to explain the fundamental structure and mode ofoperation a photosensor cell of a first embodiment of the photoelectricconverter in accordance with the present invention.

FIG. 1(a) is a plan view of a photosensor cell; FIG. 1(b) is a sectionalview taken along the line A--A' of FIG. 1(a); and FIG. 1(c) is a diagramof an equivalent circuit thereof. Same reference numerals are used todesignate similar parts throughout the figures.

In FIG. 1, the photosensor cells are shown as being arranged in a normalpixel arrangement, but it is to be understood that they may be arrangedin an offset pixel arrangement in order to enhance the resolution in thehorizontal direction.

As shown in FIGS. 1(a) and (b), each photosensor cell comprises:

a passivation film 2 comprising, in general, a film of PSG(phospho-silicate glass) formed on a major surface of an n type siliconsubstrate 1 doped with an impurity such as P, Sb or As;

an insulating oxide film 3 comprising a silicon oxide film (SiO₂);

a cell isolation region 4 comprising an SiO₂, Si₃ N₄ or polysiliconinsulating film in order to electrically isolate adjacent photosensorcells from each other;

an n⁻ region 5 which has a low impurity concentration and has beenformed by an epitaxial process or the like;

a p region 6 which has been doped with an impurity such as boron (B) byan impurity diffusion process or ion injection process and which servesas the base of a bipolar transistor;

an n⁺ region 7 which serves as the emitter of a bipolar transistorformed by an impurity diffusion process or ion injection process;

a conductor 8 formed with an electrically conductive material such asaluminum (Al), Al-Si, or Al-Cu-Si in order to read out the signal to theexterior;

an electrode 9 for applying pulses through the insulating film 3 to thep region 6 which is maintained in a floating state;

a conductor 10 connected to the electrode 9;

an n⁺ region 11 which has a high impurity concentration and is formed byan impurity diffusion process or the like in order to make it in contactwith the bottom surface of the substrate 1; and

an electrode 12 made of an electrically conductive material such asaluminum in order to apply a potential to the substrate 1; that is, inorder to apply a potential to the collector of a bipolar transistor.

In FIG. 1(a), a contact 19 is formed in order to interconnect the n⁺region 7 and the conductor 8. The intersection of the conductors 8 and10 comprises a so-called two-layer arrangement in which the conductors 8and 10 are electrically isolated from each other by means of aninsulating film consisting of an insulating material such as SiO₂. Thatis, at the intersection of the conductors 8 and 10, two metal layers arelaid one over the other, but they are electrically isolated from eachother.

In the equivalent circuit as shown in FIG. 1(c), a capacitor Cox 13 isconstituted by an MOS structure comprising the electrode 9, theinsulating film 3 and the p region 6 and abipolar transistor 14 isconstituted by the emitter consisting of the n⁺ region 7, the baseconsisting of the p region 6 and the n⁻ region 5 with a low impunityconcentration and the collector consisting of the n region 1. As isclear from FIG. 1(b), the p region 6 is floated.

In the second equivalent circuit as shown at the right half of FIG.1(c), the bipolar transistor 14 is represented by a base-emitterjunction capacitor Cbe 15, a pn junction diode Dbe 16 between the baseand emitter, a base-collector junction capacitor Cbc 17 and a pnjunction diode Dbc 18 between the base and collector.

Still referring to FIG. 1, the mode of operation of the photosensor cellwith the above-described structure will be described in detail.

The fundamental operation of the photosensor cell is composed of acharge storage operation in response to incident light, a readoutoperation and a refresh operation. In the charge storage operation, forinstance, the emitter 7 is grounded through the conductor 8 while thecollector is biased to a positive potential through the conductor 12.Since a positive pulse voltage is applied through the conductor 10 tothe capacitor Cox 13, the base 6 is maintained at a negative potential.That is, the base 6 is reverse biased with respect to the emitter 7. Theoperation of biasing the base to a negative potential by applying apulse to the capacitor Cox 13 will be described in more detai1 inconjunction with the refreshing operation.

When light 20 falls on the upper surface of the photosensor cell underthese conditions, electron-hole pairs are generated within thesemiconductor. Since the n region 1 is biased to a positive potential,electrons flow into the n region 1, and holes flow into the p region 6.As the holes are stored in the p region 6, the potential of the p region6 is gradually raised toward a positive potential.

As shown in FIGS. 1(a) and (b), the portion under the light receivingsurface of each photosensor cell is almost occupied by the p region 6and partly occupied by the n⁺ region. The concentration of electron-holepairs is of course greater as they approach the surface of thephotosensor cell. As a result, many electron-hole pairs are excited inresponse to the incident light in the p region 6. The structure of eachphotosensor cell is such that electrons excited in the p region 6 arenot recombined with the holes and flow out of the p region 6 into the nregion. Therefore the excited holes remain in the p region 6 so that thep region 6 gradually rises to a positive potential. When the p region 6has a uniform concentration of impurities, the photo-excited electronsflow to the pn⁻ junction between the p region 6 and the n⁻ region 5 dueto diffusion and then are absorbed into the n region 1 due to driftcaused by a strong electric field applied to the n⁻ region 5. It is ofcourse possible that electrons are transferred through the p region 6 bydiffusion, but when the photosensor cell is so designed and constructedthat the concentration of impurities is decreased as the impurities areaway from the surface into the interior, an electric field Ed given by##EQU1## is generated in the direction of from the interior of the pregion 6 toward the surface, where

W_(B) : the junction depth from the light incident surface of the pregion 6;

K: Boltzmann's constant;

T: the absolute temperature:

q: unit charge;

N_(AS) : the impurity concentration at the surface of the p region 6;and

N_(Ai) : the impurity concentration in the p region 6 at the boundarythereof with the n⁻ high resistance region 5.

It is assumed that N_(AS) /N_(Ai) >3. Then, the transfer of electronswithin the p region 6 is effected by drift rather than by diffusion.That is, in order that the carriers excited by the incident light in thep region 6 may effectively function as a signal, it is preferred thatthe impurity concentration in the p region 6 decreases from the lightreceiving surface toward the interior. If the p region 6 is formed bydiffusion, the impurity concentration decreases toward the interior ascompared with the impurity concentration at the light incident orreceiving surface.

Part of the light receiving surface of the sensor cell is occupied bythe n⁺ region 7. The depth of the n⁺ region 7 is preferably designed tobe about 0.2-0.3 micron or less. Therefore, the quantity of lightabsorbed in the n⁺ region 7 is not so much so that there arises noproblem. However, the presence of the n⁺ region 7 causes a decrease insensitivity to the short-wave light, especially blue light. The impurityconcentration in the n⁺ region is preferably designed at 1×10²⁰ cm⁻³ orhigher. When the n⁺ region 7 is doped with a high concentration ofimpurities, the diffusion length of holes in the n⁺ region 7 is of theorder of 0.15-0.2 micron. Therefore, in order to effectively flow thelight excited holes from the n⁺ region 7 to the p region 6, it ispreferable that, the impurity concentration decreases from the side ofthe light incident or receiving surface to the interior. If the abovecondition for impurity concentration is satisfied in the n⁺ region 7, astrong drift electric field directed from the light incident surface tothe interior is produced so that the holes excited in the n⁺ region 7 inresponse to the incident light can immediately flow into the p region 6by drift. If the impurity concentrations in both the n⁺ region 7 and thep region 6 decrease from the light incident or receiving surface towardthe interior, photo-excited carriers in the n⁺ region 7 and the p region6 in the vicinity of the light incident or receiving surface of thephotosensor cell can all effectively function as a light signal. If then⁺ region 7 is formed by the diffusion from a silicon oxide film orpolysilicon film which is heavily doped with As or P, it becomespossible an n⁺ region in which the desirable impurity gradation isproduced as described above.

Due to the accumulation or storage of holes, the base potential finallybecomes equal to the emitter potential, i.e., the ground potential inthis case, and then clipped at this potential. Strictly speaking, thebase potential is clipped at such a voltage that the base-emitterjunction is deeply forward biased so that the holes stored in the basebegin to flow into the emitter. That is, the saturation potential of thephotosensor cell in this case is substantially equal to the differencebetween a negative bias potential to which the p region 6 is initiallybiased and the ground potential. When the n⁺ region 7 is not groundedand photo-excited charge is stored under the condition that the n⁺region 7 is floated, it is possible to store the charge in the p region6 so that the potential of the p region 6 becomes substantially equal tothe potential of the n region 1.

While, the charge storage operation has been described qualitatively sofar, it will be described more definitely and quantitatively.

The spectral sensitivity distribution of this photosensor cell is givenby ##EQU2## where λ: the wavelength in micron;

α: the absorption coefficient of light in silicon crystal in micron⁻¹ ;

x: the thickness in micron of a "dead layer" in the surface region ofsemiconductor in which the recombination loss occurs so that it does notcontribute to the sensitivity;

y: the thickness in micron of an epitaxially grown layer; and

T: transmissivity, that is, the ratio between the quantity of incidentlight and the quantity of light effectively penetrated into asemiconductor, the ratio being affected by the quantity of lightreflected at the light receiving surface, etc.

The photocurrent Ip can be obtained by the following equation by usingthe spectrum sensitivity S(λ) and the radiation illumination Ee(λ):##EQU3## where the radiation illumination Ee(λ) [μW cm⁻² nm⁻¹ ] is givenby ##EQU4## where Ev: the illumination intensity [lux] at the surface ofthe photosensor cell;

P(λ, Td): spectrum distribution of light incident on the surface of thephotosensor cell; and

V(λ): luminous efficiency of human eyes.

The above-described equations are used in the case of a photosensor cellwith an epitaxial grown layer having the thickness of 4 microns which isilluminated by an A light source (Td=2854 °K) so that the illuminationintensity at the light receiving surface is 1 lux. The result is thatthe photocurrent of about 280 nA/cm² flows and that the number ofincident photons or the number of electron-hole pairs generated is ofthe order of 1.8×10¹² /cm² sec.

In this case, the potential Vp which is produced when the photo-excitedholes are stored in the base is given by

    Vp=Q/C

where

Q: the charge of holes stored, and

C: the sum of the capacitance Cbe 15, the capacitance Cbc 17, and thecapacitance Cox 13.

Now, assuming that the impurity concentration of the n⁺ region 7 be 10²⁰cm⁻³ the impurity concentration of the p region 6 be 5×10¹⁶ cm⁻³ ; theimpurity concentration of the n⁻ region be 10¹³ cm⁻³ ; the area of then⁺ region 7 be 16 μm² ; the area of the p region 6 be 64 μm² ; and thethickness of the n⁻ region 6 be 3 microns, then the function capacitanceis about 0.014 pF. Further, assuming that the storage time be 1/60 sec.;and the effective light receiving area which is equal to the area of thep region 6 minus the area of the electrodes 8 and 9 be 56 μm², then, thenumber of holes stored in the p region 6 becomes 1.7×10⁴. Consequently,the potential Vp produced in response to the incident light becomesabout 190 mV.

It should be noted herein that when the resolution is improved and thecell size is made smaller, the quantity of light incident on eachphotosensor cell decreases, but since the junction capacitance decreasesin proportion to the decrease in size of a photosensor cell, thepotential Vp produced in response to the incident light is substantiallymaintained at the same level. This is because, as shown in FIG. 1, thephotosensor cell in accordance with the present invention is simple inconstruction so that the effective light receiving area can beremarkably increased.

This is one of the reasons why the photoelectric converter in accordancewith the present invention is advantageous over the conventionalinterline type CCD image sensors. In the case of the interline type CCDimage sensors, as the resolution is enhanced and when the transfer of acertain quantity of charge intended, the transfer area relativelyincreases so that the effective light receiving area decreases, andconsequently the sensitivity, i.e., the voltage produced in response tothe incident light, decreases. Furthermore, in the case of the interlinetype CCD image sensors, the saturation voltage is limited by the size ofthe transfer area and considerably decreases. On the other hand,according to the present invention, the saturation voltage is determinedby a bias voltage applied so as to bias the p region 6 at a negativepotential as described hereinbefore, whereby a high saturation voltagecan be maintained.

Next, a mode of reading out to the exterior of the voltage produced bythe charge stored in the p region 6 in the manner described above willbe described.

In the readout mode, the emitter 7 and the conductor 8 are floated andthe collector 1 is maintained at a positive potential Vcc. FIG. 2 showsthe equivalent circuit. Assuming that prior to the illumination, thebase 6 be negatively biased to - V_(B) and the storage voltage producedin response to the incident light be Vp, the base potential becomes-V_(B) +Vp. When a positive readout voltage V_(R) is applied through theconductor 10 to the electrode 9 under these conditions, it iscapacitively divided by the oxide film capacitance Cox 13, Thebase-emitter junction capacitance Cbe 15 and the base-collector junctioncapacitance Cbc 17. As a result, a voltage of ##EQU5## is applied to thebase. Therefore, the base potential is given by ##EQU6## It is assumedthat the following condition is satisfied: ##EQU7## Then, the basepotential becomes equal to the storage voltage Vp produced in responseto the incident light. When the base potential is forward biased withrespect to the emitter potential, the electrons are injected from theemitter into the base, and accelerated by the drift electric field toreach the collector because the collector is held at a positivepotential. The current flowing at this stage is given by ##EQU8## whereAj: the area of the base-emitter junction;

q: unit charge (1.6×10⁻¹⁹ coulomb);

Dn: the diffusion coefficient of electrons in the base 6;

n_(po) : the concentration of electrons (which are minority carriers) atthe emitter end of the p base 6;

W_(B) : the width of the base;

N_(Ae) : the acceptor concentration at the emitter end of the base;

N_(AC) : the acceptor concentration at the collector end of the base;

k: Boltzmann's constant;

T: the absolute temperature; and

V_(e) : the emitter potential.

It is apparent from the above-described equation that the current keepsflowing until the emitter voltage Ve becomes equal to the basepotential, that is, the storage voltage Vp produced in response to theincident light in this case. Now, the variation is emitter potential Vewith the elapse of time can be obtained by the following equation:##EQU9## where Cs: the capacitance 21 of conductor 8 connected to theemitter 7.

FIG. 3 shows some examples of the variation in emitter potential withtime obtained from the above-described equation.

It is seen from FIG. 3 that it takes more than one second before theemitter potential becomes equal to the base potential. This is because,as the emitter potential Ve approaches Vp, the current flow is somewhatretarded. Therefore, in order to solve this problem, instead ofestablishing the condition ##EQU10## when the positive potential V_(R)is applied to the electrode 9, the following condition may be adopted tobe established: ##EQU11##

Thus, the base potential is further forward biased by V_(bias). In thiscase, the current is given by ##EQU12##

FIG. 4(a) shows the relationship between the storage voltage Vp and thereadout voltage, i.e., the emitter potential Ve, under the conditionsthat V_(bias) is set at 0.6 V and the potential V_(R) applied to theelectrode 9 is returned to zero volt after a predetermined time periodso that the flow of current is interrupted. It is to be noted that,while actually a certain potential given by the bias voltage componentand dependent upon a readout time is always added to the readoutvoltage, the value obtained by subtracting such additional potential asdescribed above is plotted in FIG. 4(a). When the positive voltage V_(R)which has been applied to the electrode 9 is returned to zero volt, thenthe voltage given by ##EQU13## is contrariwise added to the basepotential so that the base potential becomes equal to the potentialprior to the application of the positive voltage V_(R). That is, thebase potential becomes equal to -V_(B) +V_(P) and is reverse biased withrespect to the emitter 7 so that the current flow is interrupted. It isseen from FIG. 4(a) that when a readout time (i.e., a time during whichV_(R) is being applied to the electrode 9) is longer than 100 ns, thelinearity between the storage voltage V_(p) and the readout voltageV_(R) can be maintained within a range of about four orders of magnitudeso that the readout operation can be carried out at a high speed. InFIG. 4(a), the straight line with a slope angle of 45° corresponds tothe result obtained in a case where a sufficient readout time is used.In obtaining the characteristic curves shown in FIG. 4(a), it has beenassumed that the capacitance Cs of the conductor 8 is 4 pF. Even thoughthe capacitance Cs is about 300 times as large as 0.014 pF of thejunction capacitance Cbe+Cbc, FIG. 4(a) shows that the storage voltageVp produced in the p region 6 is not attenuated at all and that thereadout speed is considerably high because of the effect of the biasvoltage. This is because the amplification function, i.e., the chargeamplification function, of the photosensor cell in accordance with thepresent invention is very effective.

On the other hand, in the case of the conventional MOS image pickupdevices, in the readout stage, the storage voltage Vp becomesCj.Vp/(Cj+Cs) (where Cj is the pn junction capacitance of the lightreceiving area of a MOS type image pickup device) due to the influenceof the conductor capacitance Cs. Thus, the conventional MOS image pickupdevices have a drawback that the readout voltage drops by a factor oftwo. Consequently, the MOS type image pickup devices have drawbacks suchas high fixed pattern noise due to the fluctuation of parasiticcapacitance of MOS switching transistors which are used to read outinformation to the exterior or high random noise produced due to a highwiring or output capacitance. Therefore, the conventional MOS type imagepickup devices cannot give a satisfactorily high S/N (signal-to-noise)ratio. In contrast thereto, in the case of the photosensor cell of thetype as shown in FIGS. 1(a), (b) and (c), since the storage voltageproduced in the p region 6 per se is read out to the exterior and thisstorage voltage is relatively high, fixed pattern noise and random noisedue to an output capacitance are reduced relatively so that asatisfactory S/N ratio can be obtained.

It has been described that the linearity of about four orders can beobtained at a high readout speed when the bias voltage V_(bias) is setto 0.6 V, and FIG. 4(b) shows in more detail the linearity in terms ofthe relationship between a readout time and a bias voltage, based on thecalculated data.

In FIG. 4(b), the abscissa represents the bias voltage V_(bias) whilethe ordinate the readout time. The parameters represent the percentagesof the readout voltage with respect to the stored voltage, and the linesin FIG. 4(b) indicate the required readout time within which the readoutvoltages reach 80, 90, 95 and 98%, respectively, of the stored voltageon the assumption that the stored voltage is 1 mV. As will be understoodfrom FIG. 4(a), it is apparent that when the readout voltages reach 80,90, 95 and 98%, respectively, of the stored voltage of ₁ mV, betterreadout characteristic or percentages can be obtained if the storagevoltage is in excess of 1 mV.

From FIG. 4(b), it is seen that when the bias voltage V_(bias) is 0.6 V,the readout time required for obtaining a readout voltage of 80% of thestored voltage is 0.1 μs; for 90% 0.27 μs; for 95% 0.54 μs; and for 98%1.4 μs. FIG. 4(b) further shows that if the bias voltage V_(bias) isincreased above 0.6 V, a higher readout speed can be obtained. Thus,when a desired readout time and desired linearity are determined duringthe design of the whole construction of an image pickup device, arequired bias voltage V_(bias) can be determined from the graph as shownin FIG. 4(b).

Another advantage of the photosensor cell in accordance with the presentinvention is that the holes stored in the p region 6 can be read outnondestructively because the probability of recombination of holes withelectrons in the p region 6 is extremely low. More particularly, whenthe voltage V_(R) which has been applied to the electrode 9 during thereadout stage is returned to zero volt, the potential of the p region 6is reverse biased as in the case before the voltage V_(R) is applied.Therefore, as long as new light is not incident on the photosensor cell,the stored voltage Vp produced in response to the incident light can bemaintained as it is. This means that when the above-describedphotosensor cell is used as a photoelectric converter, a novel functioncan be provided from the standpoint of system operation.

The time period during which the stored voltage Vp can be held in the pregion 6 is extremely long and the maximum holding time is ratherrestricted by a dark current thermally produced in the depletion layer.This is because the photosensor cell is saturated by the dark currentthermally produced. However, according to the above describedphotosensor cell of the present invention, the depletion layer extendsin the low-impurity-concentration n⁻ region 5 and the impurityconcentration in the n⁻ region 5 is as extremely low as 10¹² -10¹⁴ cm⁻³so that the n⁻ region 5 has excellent crystal properties. As a result,as compared with the MOS and CCD type image pickup devices, thermallygenerated electron-hole pairs are very few so that the dark current isalso less as compared with the conventional devices. In other words, thephotosensor cell of the above construction has a structure whichessentially results in less dark current noise.

Next, the operation of refreshing the charge stored in the p region 6will be described.

In the photosensor cell of the invention, as has been already described,charge stored in the p region 6 does not vanish in the readout stage.Therefore, in order to input new light information, a refresh operationfor extinguishing the charge stored in the p region 6 is required.Simultaneously, the potential of the p region 6 which has been floatedmust be set to a predetermined negative potential.

In the photosensor cell in accordance with the present invention, therefreshing operation is carried out by applying a positive voltage tothe electrode 9 through the conductor 10 as in the readout operation. Inthis case, the emitter is grounded through the conductor 8. Thecollector is grounded or maintained at a positive potential through theelectrode 12. FIG. 5 shows an equivalent circuit of the refreshoperation in the case of the collector grounding.

When a positive voltage V_(RH) is applied to the electrode 9 under theseconditions, because of the capacitance division among the insulatingfilm capacitance Cox 13, the base-emitter junction capacitance Cbe 15and the base-collector junction capacitance Cbc 17, a voltage given by##EQU14## is instantaneously applied to the base 22 as in the readoutoperation previously explained. Because of this voltage, a base-emitterjunction diode Dbe 16 and a base-collector junction diode Dbc 18 areboth forward biased so that they are conducted and consequently acurrent flows through them. As a result, the base potential graduallydecreases.

In this case, the variation of the potential V of the base which ismaintained in the floating state can be approximately expressed by thefollowing equation:

    (Cox+Cbe+Cbc) dv/dt=-(i.sub.1 +i.sub.2)

where ##EQU15## where i₁ : the current flowing through the diode Dbc;

i₂ : the current flowing through the diode Dbe;

Ab: the area of the base;

Ae: the area of the emitter;

Dp: the diffusion constant of holes in the collector;

p_(no) : the concentration of holes in the collector which are in thethermally equilibrium state;

Lp: the mean free path of holes in the collector; and

n_(po) : the concentration of electrons in the base are in the thermallyequilibrium state.

In connection with the current i₂, the current due to injection of holesfrom the base to the emitter is negligible because the impurityconcentration in the emitter is sufficiently higher than that in thebase.

The above-described equation is given based on the abrupt junctionapproximation, but the behavior in an actual device deviates from theabrupt junction. Furthermore, because the width of the base is shallowand the impurity profile is complicated, the above-described equationdoes not strictly hold, but the refresh operation can be sufficientlyexplained thereby with a fair approximation.

Of the current i₁ flowing between the base and collector, the componentq.Dp.p_(no) /Lp represents a current due to holes, i.e., a component dueto holes flowing from the base to the collector. In order to facilitatethe flow of current due to holes, in the photosensor cell of the aboveconstruction, the impurity concentration in the collector is designed tobe relatively lower than that of a conventional bipolar transistor.

FIG. 6 shows some examples of the time-dependency of the base potentialobtained from the above-described equation. The abscissa represents atime period having elapsed from the instant when the refreshing voltageV_(RH) is applied to the electrode 9, that is, the refreshing time,while the ordinate represents the base potential. The initial potentialof the base is used as a parameter. The initial potential of the base isthe potential of the base which is maintained in the floated state atthe instant when the refreshing voltage V_(RH) is applied and isdetermined by the refreshing voltage V_(RH), the capacitance Cox, Cbeand Cbc and the charge stored in the base.

It is seen from FIG. 6 that the base potential is not dependent upon theinitial potential and drops linearly after a certain time when the basepotential is plotted versus the refreshing time on a semilogarithmicscale.

FIG. 6(b) shows an experimental relationship between the refreshing timeand the base potential. As compared with FIG. 6(a) showing calculateddata, the experimental data does not coincide with the former in termsof values themselves because of the device used in the experiments wasconsiderably large in dimension, but it has been proved that the basepotential varies linearly with respect to time when the data obtained inthe experiments were plotted on a semilogarithmic scale. The dataobtained by the experiments show the values when both the collector andemitter were grounded.

It is now assumed that the maximum stored voltage due to lightirradiation is 0.4 V and that the voltage V applied to the base becauesof the appliation of the refreshing voltage V_(RH) is 0.4 V. Then, themaximum value of the initial potential of the base becomes 0.8 V asshown in FIG. 6(a) and about 10⁻¹⁵ sec. after the refreshing voltageV_(RH) is applied, the base potential starts to drop linearly. After10⁻⁵ sec., the base potential varies coinciding with the potentialvariation where no light falls on the photosensor cell, that is, thepotential variation where the initial base potential is 0.4 V.

There are two methods for applying a positive voltage to the p region 6for a predetermined time period through the MOS capacitor Cox and thenremoving the positive voltage so that the p region 6 is chargednegatively. According to one method, the negative charge is storedbecause holes having a positive charge flow from the p region 6 mainlyinto the n region 1 which is grounded. In order that the holes may flowunidirectionally from the p region 6 into the n region 1 and that theflow of electrons from the n region 1 into the p region may beprevented, the impurity concentration in the p region 6 is made higherthan that in the n region 1. According to the other method, the negativecharge may be stored in the p region 6 because electrons from the n⁺region 7 and the n region 1 flow into the p region 6 and recombine withholes therein. In this case, the impurity concentration in the n region1 is made higher than that in the p region 6. The operation in which thenegative charge is stored because of the flow of holes from the p region6 is by far faster than the operation in which the negative charge isstored because electrons flow into the p region 6 and recombine withholes therein. However, according to our experiments conducted so far,it has been confirmed that even the refreshing operation by injectingthe electrons into the p region 6 has a sufficiently fast response withrespect to the operation of the photoelectric converter.

When a plurality of photosensor cells of the above construction arearranged in X and Y directions so as to provide a photoelectricconverter, the storage voltages Vp vary in the range between 0 and 0.4 Vas described above in respective sensor cells. However, 10⁻⁵ sec afterthe refreshing voltage V_(RH) is applied, the constant voltage of theorder of about 0.3 V remains at the bases of all photosensor cells, butthe variations in storage voltage Vp due to pictorial image alldisappear. Thus, with respect to the photoelectric converter consistingof photosensor cells of the above construction, there are two refreshingmodes. One is the complete refreshing mode in which the base potentialsof all the photosensor cells are brought to zero volt (In this case, ittakes 10 seconds in the example as shown in FIG. 6(a).The other is atransient refreshing mode in which even though a certain base potentialremains, varying components due to the storage voltage Vp disappear. (Inthis case, a refreshing pulse of 10 microseconds to 10 seconds isapplied in the example as shown in FIG. 6(a).). In the examplesexplained so far, the voltage V applied to the base due to therefreshing voltage V_(RH) has been described as being 0.4 V, but if thisvoltage V is 0.6 V, the transient refreshing mode is accomplished withinone nanosecond in the case of the example as shown in FIG. 6(a). Thus,it is undersood that the refreshing operation can be carried out at aremarkably high speed. Whether the complete refreshing mode or thetransient refreshing mode is employed is dependent upon the use orpurpose of a photoelectric converter.

It is assumed that the voltage remaining at the base in the transientrefreshing mode is Vk. Then, during the transient state in which therefresh voltage V_(RH) is returned to zero volt after it has beenapplied, the negative voltage given by ##EQU16## is applied to the baseso that the base potential after the refreshing operation in response toa refresh pulse becomes ##EQU17## and consequently the base is reversebiased with respect to the emitter.

In the previous explanation of the storage operation in which thecarriers excited by the incident light are stored, the storage operationhas been described as being carried out while the base is reversebiased. According to the above-described refreshing operation, however,not only the refresh operation but also the operation for reversebiasing the base are performed simultaneously.

FIG. 6(c) shows experimental data for the base potential after therefreshing operation versus the refreshing voltage V_(RH) satisfying therelationship given by ##EQU18## Cox is taken as a parameter varying from5 pF to 100 pF. The dots represent the experimental results while thesolid lines indicate the values obtained by the following expression:##EQU19## Herein, Vk=0.52 V and Cbc+Cbe=4 pF. Further, the capacitanceof the probe of an observation oscilloscope was connected in parallelwith the capacitance Cbc+Cbe. Thus, the calculated values and theexperimental results exactly coincide with each other and the refreshingoperation has been confirmed by the experiments.

So far, the refreshing operation has been described with reference to acase where, the collector is grounded as shown in FIG. 5, but it is tobe understood that the refreshing operation can also be carried outunder the state where the collector is maintained at a positivepotential. In the latter case, when a refreshing pulse is applied to thebase-collector junction diode Dbc 18, if the positive potential appliedto the collector is higher than the potential applied to the base inresponse to the application of this refreshing pulse, the nonconductionstate remains so that the current flows only through the base-emitterjunction diode Dbe 16. Therefore, the decay of the base potentialbecomes slower, but the operation which is basically the same as theoperation described hereinbefore is carried out.

More specifically, the relationship between the refreshing time and thebase potential as shown in FIG. 6(a) changes in such a way that theoblique straight line indicating the potential drop is shifted to theright, i.e. in a direction to lengthen the refresh time. As a result,when the same refreshing voltage V_(RH) is used as in the case where thecollector is grounded, the refreshing time is increased, but when therefreshing voltage is increased slightly, the high-speed refreshingoperation becomes possible as in the case where the collector isgrounded.

So far, the fundamental operation of the photosensor cell of the aboveconstruction comprising the charge storage operation in response to theincident light, the readout operation and the refresh operation has beendescribed.

As described above, the fundamental construction of the photosensor cellin accordance with the present invention is by far simpler as comparedwith those of the semiconductor image pickup devices of the typesdisclosed in Japanese Patent Application Laid-Open Nos. 56-150878,56-157073 and 56-165473 described hereinbefore, and can satisfactorilybe adapted to a higher resolution required in the future. In addition,the photosensor cell of the above construction retains such advantagesas the low noise, high output, wide dynamic range and nondestructivereadout of the disclosed devices.

Next, one embodiment of the photoelectric converter in accordance withthe present invention in which the unit photosensor cells of theabove-described construction are arranged two-dimensionally will bedescribed with reference to the accompanying drawings.

FIG. 7 shows a circuit diagram of a photoelectric converter in which theunit photosensor cells are arranged two-dimensionally in 3×3 units.

The photoelectric converter shown in FIG. 7 comprises unit photosensorcells, one of which is surrounded by the dotted line and designated by areference numeral 30 (the collector of each bipolar transistor beingshown as connected to a substrate and a substrate electrode); horizontallines 31, 31' and 31" to which are applied refresh and readout pulses; avertical shift register generating readout pulses; buffer MOStransistors 33, 33' and 33" interconnected between the vertical shiftregister 32 and the horizontal lines 31, 31' and 31", respectively; aterminal 34 for applying a gate pulse to the gates of the buffer MOStransistors 33, 33' and 33"; buffer MOS transistors 35, 35' and 35" forapplying refresh pulses; a terminal 36 for applying a pulse to the gatesof these buffer MOS transistors 35, 35' and 35"; a terminal 37 forapplying refreshing pulses; vertical lines 38, 38' and 38" for readingout the stored voltages from the fundamental photosensor cells; ahorizontal shift register 39 for generating pulses so as to select thevertical lines 38, 38' and 38"; MOS gate transistors 40, 40' and 40" forturning on and off the vertical lines 38, 38' and 38"; an output line 41for reading the stored voltage out to an amplifier; a MOS transistor 42for refreshing the charge stored on the output line 41 after the readoutoperation; a terminal 43 for applying a refreshing pulse to the MOStransistor 42; a transistor 44 such as a bipolar transistor, MOStransistor, FET or J-FET transistor for amplifying the output signal; aload resistor 45; a terminal 46 for interconnecting a power supply andthe transistor 44; an output terminal 47 of the transistor 44; MOStransistors 48, 48' and 48" for refreshing the charge stored on thevertical lines 38, 38' and 38" during the readout operation; and aterminal 49 for applying a pulse to the gates of the MOS transistors 48,48' and 48".

The operation of the photoelectric converter will be described byreferring to FIG. 7 and a pulse timing chart shown in FIG. 8(a).

In FIG. 8(a), the period 61 corresponds to the refreshing operation; theperiod 62, the storage operation; and the period 63, the readoutoperation.

At time t₁, the substrate potential, that is, the collector potential 64of the photosensor cell is maintained at the ground potential or apositive potential. FIG. 8(a) shows a case where the collector potential64 is at the ground potential. Regardless of whether the collectorpotential 64 is grounded or maintained at a positive potential, thefundamental mode of operation remains unchanged except that therefreshing time changes as described before. The potential 65 of theterminal 49 is maintained at a high level so that the MOS transistors48, 48' and 48" are conducted or turned on and consequently each emitterof photosensor cell is grounded through the vertical lines 38, 38' and38". A voltage shown by a waveform 66 is applied to the terminal 36 sothat the buffer MOS transistors 35, 35' and 35" for overall refreshingof the whole frame or picture are turned on. When a pulse shown by awaveform 67 is applied to the terminal 37 under these conditions, avoltage is applied through the horizontal lines 31, 31' and 31" to thebases of the photosensor cells so that the refreshing operation isinitiated as described hereinbefore. Therefore, the previously storedcharge is refreshed in accordance with the complete refresh mode or thetransient refreshing mode. Whether the complete refreshing mode or thetransient refreshing mode is carried out, is dependent upon the pulsewidth of the waveform 67.

At time t₂, as described hereinbefore, the base of the transistor ofeach photosensor cell is reverse biased with respect to the emitter andthe storage period 62 commences. In the refresh period 61, as shown inFIG. 8(a), all the pulses except for those described above aremaintained at low levels.

In the storage operation period 62, the substrate potential, i.e., thecollector potential of the transistor is rendered a positive potentialas indicated in a waveform 64 in FIG. 8(a), whereby the electrons of theelectron-hole pairs produced in response to the incident light arecaused to flow immediately into the collector. That the collectorpotential is maintained at a positive potential is not an essentialcondition because when the photoelectric converter is used for pickingup images, the base is reverse biased with respect to the emitter, thatis, maintained at a negative potential. Therefore, the fundamental modeof storage operation remains unchanged even if the collector potentialis grounded or maintained slightly at a negative potential.

In the storage operation, the potential 65 of the gate terminal 49 ofthe MOS transistors 48, 48' and 48" is maintained at a high level as inthe refreshing period so that the MOS transistors are kept turned on. Asa result, the emitters of the photosensor cells are grounded through thevertical lines 38, 38' and 38". As the holes are stored in the base andthe base is saturated due to irradiation of high intensity light, i.e.,as the base potential is forward biased with respect to the emitterpotential (ground potential), the holes flow through the vertical lines38 38' and 38". Consequently, variation in base potential is interruptedand the base potential is clipped. It follows therefore that even whenthe emitters of the photosensor cells disposed adjacent to each other inthe vertical direction are connected to the vertical lines 38, 38' and38" in common, no blooming phenomenon occurs as the vertical lines 38,38' and 38" are grounded as described above.

The blooming phenomenon may also be obviated in a different way asfollows. First, the MOS transistors 48, 48' and 48" are turned off sothat the vertical lines 38, 38' and 38" are floated. The substratepotential or the collector potential 64 is maintained at a slightlynegative potential so that when the base potential is raised to apositive potential due to the storage of holes, the holes are caused toflow into the collector rather than into the emitter.

At time t₃, the readout operation period 63 commences following thestorage period 62. At the time t₃, the potential 65 at the gate terminal49 of the MOS transistors 48, 48' and 48" is rendered low while thepotential at the gate terminal 34 of the buffer MOS transistors 33, 33'and 33" is rendered high so that the MOS transistors 33, 33' and 33" areturned on. It should be noted, however, that it is not essential tobring the potential 68 of the gate terminal 34 to a high level at timet₃ and that the potential 68 may be raised to a high level at any timeprior to t₃.

At time t₄, of the output signals from the vertical shift register 32,one connected to the horizontal line 31 rises to a high level asindicated by the waveform 69 in FIG. 8(a), whereby the information isread out from the three photosensor cells connected to the horizontalline 31. This readout operation is conducted as has been explainedbefore. That is, the signal voltages produced by the signal chargesstored in the base regions of the respective photosensor cells directlyappear at the vertical lines 38, 38' and 38". In this case, the pulsewidth of the pulse voltage from the vertical shift register 32 is sodetermined that, as shown in FIG. 4, the readout voltage with respect tothe storage voltage may have a sufficient linearity. Furthermore, asdescribed hereinbefore the pulse voltage is forward biased with respectto the emitter by a value V_(bias).

At time t₅, of the outputs from the horizontal shift register 39, one tothe gate of the MOS transistor 40 connected to the vertical line 38 israised to a high level as indicated by the waveform 70 in FIG. 8(a) sothat the MOS transistor 40 is turned on, whereby the output signal isapplied to the output transistor 44 through the output line 41,amplified and derived from the output terminal 47. After the signal hasbeen read out in the manner described above, as the signal chargeremains on the output line 41 due to the conductor capacitance, a pulseas shown by waveform 71 is applied to the gate terminal 43 of the MOStransistor 42 at time t₆ so that the latter is turned on andconsequently the output line is grounded, whereby the remaining signalcharge is refreshed. In like manner, the switching MOS transistors 40'and 40" are sequentially turned on so that the signal outputs arereadout from the vertical lines 38' and 38". After the signals have beenread out from the photosensor cells along one horizontal line in themanner described above, some signal charges remain on the vertical lines38, 38' and 38", as in the case of the output line 41, due to theircapacitances. Therefore, the potential at the gate terminal 49 is raisedto a high level as indicated by the waveform 65 so that the MOStransistors 48, 48' and 48" connected to the vertical lines 38, 38' and38", respectively, are turned on and consequently the remaining signalcharges are refreshed.

At time t₈, of the outputs from the vertical shift register 32, theoutput transmitted to the horizontal line 31' is raised to a high levelas indicated by the waveform 69' in FIG. 8(a) so that the storagevoltages of the photosensor cells connected to the horizontal line 31'are read out to the vertical lines 38, 38' and 38", respectively.Therefore, the signal is derived from the output terminal 47 in a mannersubstantially similar to that described above.

So far, the mode of operation has been described with reference to afield of application where the storage period 62 and the readout period63 are distinctly distinguished from each other such as a still mode ofa video device whose research and development have been recentlyextensively carried out, but the photoelectric converter in accordancewith the present invention may be equally applied to the field where theoperation in the storage period 62 and the operation in the readoutperiod 63 are simultaneously carried out if the pulse timing as shown inFIG. 8(a) is modified. In the latter case, however, the refreshingoperation is not the overall refreshing of the whole picture but aline-by-line refreshing operation is required. For instance, after thesignals from the photosensor cells connected to the horizontal line 31have been read out, the MOS transistors 48, 48' and 48" are turned on attime t₇ in order to refresh the charges remaining on the vertical lines38, 38' and 38". At this time, a refreshing pulse is applied to thehorizontal line. That is, the refreshing operation of each line can beaccomplished by employing a vertical shift register which is adapted togenerate a pulse at t₇ as well as at t₄ in the waveform 69, the voltageand the pulse width of the pulse generated at t₇ being different fromthose of the pulse generated at t₄. Alternatively, the refreshingoperation of each line can be accomplished in the manner describedbelow. That is, instead of the device shown at the right side in FIG. 7for applying the overall refreshing pulse, a second vertical shiftregister is disposed on the right side and caused to operate indifferent timing relationship with the vertical shift register 32 on theleft side.

In this case, the degree of freedom for suppressing blooming bycontrolling the potentials at the emitter and collector of eachphotosensor cell is decreased. However, as described in conjunction withthe fundamental mode of operation, the photosensor cell according to theinvention is so constructed that the high-speed readout operation can becarried out only when the bias voltage V_(bias) is applied to the base.Therefore, as is clear from the graph as shown in FIG. 3, the signalcharges flowing into the vertical lines 38, 38' and 38" because of thesaturation of the photosensor cells are extremely small in amount whenno bias voltage V_(bias) is applied, whereby the blooming phenomenonhardly occurs.

Furthermore, the photoelectric converter in accordance with thisembodiment has an excellent capability of suppressing the smearingphenomenon. The smearing is caused in the CCD type image pickup devices,especially in the frame transfer type image pickup device, because ofthe mode of operation and construction where the charge is transferredover the illuminated area. In the case of the interline image pickupdevices, the smearing is caused because carriers which have beenproduced at a deep portion of a semiconductor due to light rays havingrelatively long wavelengths are accumulated in a charge transfer area.Furthermore, in the case of the MOS image pickup devices, the smearingoccurs because the carriers which have been produced at a deep portionof a semiconductor due to light rays having relatively long wavelengthsare accumulated on the drain side of a MOS switching transistorconnected to each photosensor cell.

In contrast to the above, in the case of the photoelectric converter inaccordance with the present invention, the smearing caused due to themode of operation and structure can be substantially eliminated.Furthermore, the smearing does not substantially occur at all due tocarriers produced and accumulated at a deep portion of a semiconductorin response to light rays having relatively long wavelengths. On theother hand, some people may be concerned about a phenomenon thatelectrons among electrons and holes produced in the emitter in thevicinity of the surface of the photosensor cell are accumulated.However, such a phenomenon cannot actually be a cause of the smearingbecause, in the case of the storage operation according the overallrefresh mode, the emitter is grounded so that no electron isaccumulated.

Furthermore, in the case of the line refreshing operation adapted forordinary television cameras, the vertical lines are grounded forrefreshing during the horizontal blanking period prior to the readout ofthe stored voltages to the vertical lines, whereby the electrons whichhave been stored or accumulated at the emitter during one horizontalscanning period are almost flown out so that the smearing can besubstantially eliminated. As described above, according to thephotoelectric converter of this embodiment, because of the mode ofoperation and construction thereof, the smearing can only occur to asubstantially negligible extent. This is one of the important advantagesof the photoelectric converter in accordance with the present invention.

The operation for suppressing blooming phenomenon by controlling theemitter and collector potentials in the storage operation has beendescribed and the operation can also be used to control the gamma (γ)characteristic.

More specifically, during the storage operation, the emitter orcollector potential is temporarily maintained at a predeterminednegative potential so that, of the carriers stored in the base, theholes which are stored in excess of the number of carriers giving thenegative potential are caused to flow into the emitter or collector.Then, the relationship between the stored voltage and the quantity ofincident light becomes such that when the quantity of incident light issmall, it is close to the characteristic of γ=1, of a silicon crystaland that when the quantity of incident light is large, the gamma (γ)becomes less than unit. Therefore, the photoelectric converter inaccordance with the present invention can have the characteristic ofγ=0.45 which is demanded by ordinary television cameras, according tothe line-segment approximation. When the above-described operation iscarried out once during the storage operation, two-line-segmentapproximation can be obtained. When the negative potential applied tothe emitter or collector is changed twice, the three-line-segmentapproximation type gamma characteristic can be obtained.

In the above example, the silicon substrate is used as a commoncollector but, as in the case of a bipolar transistor, a buried n₊region may be provided so that each line has its own collector.

In addition to the pulses shown in FIG. 8(a), clock pulses for drivingthe vertical shift register 32 and the horizontal shift register 39 arerequired for practical operation.

FIG. 9 shows equivalent circuits for deriving the output signal. Thecapacitance Cv 80 represents the sum of the capacitance of the verticallines 38, 38' and 38" and the capaticance C_(H) 81 represents theconductor capacitance of the output line 41. The right-side equivalentcircuit in FIG. 9 shows the readout stage when the MOS switchingtransistors 40, 40' and 40" are turned on and the resistance thereof inthe state of turning on is represented by a resistor R_(M) 82. Theamplifier transistor 44 is represented by an equivalent circuitconsisting of a resistor r_(e) 83 and a current source 84. In thereadout stage, the MOS transistor 42 for refreshing the stored chargedue to the conductor capacitance of the output line 41 remains turnedoff and since it has a high impedance, it is not shown in the right-sideequivalent circuit.

Parameters used in the equivalent circuit are determined depending uponthe size of a photoelectric converter actually used. Calculatedwaveforms of the output signals derived from the output terminal 47 areshown in FIG. 10 based on the assumption that the capacitance C_(V) 80is about 4 pF; the capacitance C_(H) 81 is about 4 pF; the resistanceR_(M) 82 of the turned-on MOS transistor is 3 K ohms; and the currentamplification factor β of the bipolar transistor 44 is about 100.

In FIG. 10, the abscissa represents the time in microsecond from theinstance when the MOS switching transistors 40,40' and 40" are turned onwhile the ordinate represents the output voltage [V]derived from theoutput terminal 47 when one volt is applied across the conductorcapacitance Cv 80 of the vertical lines 38, 38' and 38" due to readoutof the signal charge from each photosensor cell.

The output signal waveform 85 is obtained when the load resistor R_(E)45 is 10 kiloohms; the waveform 86 is obtained when the load resistanceR_(E) 45 is 5 kiloohms; and the waveform 87 is obtained when the loadresistor R_(E) 45 is 2 kiloohms. They have the peak values of the orderof 0.5 V because of the capacitance division of the capacitance Cv 80and C_(H) 81. As a matter of course, the larger the value of the loadresistor R_(E) 45 is, the lesser the attenuation becomes. Thus, it ispreferable that in order to obtain a desired output waveform the loadresistor R_(E) 45 has a large value. With the above-describedparameters, the rise time is as short as of the order of about 20nanoseconds. The readout time can be further shortened by decreasing theresistance R_(M) under the state where the MOS switching transistors 40,40' and 40" are turned on, and by decreasing the conductor capacitancesC_(V) and C_(H).

In the photoelectric converter of the type described above, a highoutput voltage is obtained because each photosensor cell has anamplification function so that the final stage amplifier can be madesimple in construction as compared with the one in the conventional MOStype image pickup device. So far, only one bipolar transistor is used,but it is apparent that two bipolar transistors or any other suitablesystems may be used. When a bipolar transistor is used as in the case ofthis embodiment, the problem of 1/f noise which is caused from the finalstage MOS transistor amplifier of the conventional CCD image pickupdevice and which is readily noticeable on the image can be substantiallysolved. As a result, an image quality with a high S/N ratio can beobtained by the photoelectric converter of this embodiment.

As described above, in the photoelectric converter consisting of aplurality of photosensor cells in accordance with the present invention,the final stage amplifier may be very simple in construction so that, inaddition to the photoelectric converter of the type in which only oneamplifier is arranged at the final stage as shown in FIG. 7, a pluralityof amplifiers may be disposed in such a way that one picture frame maybe divided into a plurality of sections which may be read outseparately.

FIG. 11 shows an example of a multiple or divisional readout system inwhich a photoelectric converter is divided into three sections in thehorizontal direction and three final-stage amplifiers are disposed. Thefundamental mode of operation of this embodiment is substantially thesame as that of the embodiment described in detail with reference toFIG. 7 and FIG. 8(a), but in the embodiment shown in FIG. 11, threeequivalent horizontal shift resistors 100, 101 and 102 are provided.When a starting pulse is applied to a terminal 103 so as to apply it tothe horizontal shift registers 100, 101 and 102, the outputs of thephotosensor cells connected to the first column, the (n+1)-th column andthe (2n+1)-th column (where n is an integer and in this embodiment, thenumber of 3n picture elements or pixels are arranged in each horizontalrow.) can be simultaneously read out. In the next step, the second,(n+2)-th and (2n+2)-th columns are read out.

According to this embodiment, when a time period required for readingout one horizontal line is fixed, the horizontal scanning frequencyrequired becomes 1/3 as compared with the system in which only onefinal-stage amplifier is disposed. As a result, the horizontal shiftregisters can be made simple in fabrication. Another great advantage ofthe multiple readout system is that even when the analog output signalfrom the photoelectric converter is converted into a digital signal andthe digital signal is further processed, a high-speed analog-to-digitalconverter need not be used.

In the embodiment as shown in FIG. 11, three equivalent horizontal shiftregisters are provided, but the same function can be accomplished withonly one horizontal shift register as will be described below withreference to FIG. 12.

In FIG. 12, among the members also contained in the embodiment of FIG.11, only horizontal switching MOS transistors and an intermediateportion of a final stage amplifier are shown because the otherarrangements are substantially the same as those of the embodiment shownin FIG. 11.

In the embodiment shown in FIG. 12, the output from one horizontal shiftregister 104 is applied to the gates of the switching MOS transistors ofthe first column, the (n+1)-th column and the (2n+1)-th column so thatthese lines are simultaneously read out. In the next step, the second,the (n+2)-th and the (2n+2)-th columns are simultaneously read out.

According to this embodiment, the readout operation can be carried outwith only one horizontal shift register even though the number of lineconnected to the gates of the switching MOS lines transistors isincreased.

In the embodiments as shown in FIGS. 11 and 12, three output amplifiersare provided, but the number of output amplifiers can be furtherincreased as desired in view of the object.

In FIGS. 11 and 12, the start pulses and the clock pulses to be appliedto the horizontal and vertical shift registers are not shown and thesepulses may be supplied from a clock pulse generator disposed on the samechip or on another chip as is the case of the refreshing pulses.

When the line refreshing operation or the frame refreshing operation iscarried out in the multiple readout system of the type described above,the storage time of the photosensor cells of the n-th column is slightlydifferent from the storage time of the photosensor cells of the (n+1)-thcolumn. As a result, slight discontinuity of the dark current componentand the signal component can occur and can be observed on the pictureimage. However, in practice, the quantity of discontinuity is extremelysmall so that no problem arises. Even when discontinuity exceeds atolerable level, an external circuit may be used so as to compensate itin a simple manner by using a conventional compensation technique whichcomprises generating a sawtooth waveform, subtracting it from the darkcurrent component and multiplying or dividing it with the signalcomponent.

When the photoelectric converter in accordance with the presentinvention is used to pick up a color image, a stripe or mosaic filtermay be integrally formed over the chip of the photoelectric converter ora separate filter may be bonded to the photoelectric converter so thatthe color signals may be obtained.

For instance, when an R-G-B stripe filter is used, the R, G and Bsignals can be derived from separate final stage amplifiers as shown inan embodiment of FIG. 13. As is the case of FIG. 12, FIG. 13 only showsa horizontal shift register and its associated parts and otherarrangements are substantially similar to those shown in FIGS. 7 and 11.It is assumed that the first column is provided with an R color filter;the second column is provided with a G color filter; the third column isprovided with a B color filter; the fourth column is provided again withan R filter and so on. As shown in FIG. 13, the vertical lines in thefirst, fourth, seventh and so on columns are connected to an output line110 so that the R signal may be derived therefrom. The vertical lines ofthe second, fifth, eighth and so on columns are connected to an outputline 111 so as to derive the G signal. In like manner, the third, sixth,nineth and so on columns are connected to an output line 112 so that theB signal may be derived. These output lines 110, 111 and 112 areconnected to refreshing MOS transistors and final-stage amplifiers suchas emitter-follower provided on the same chip, whereby respective colorsignals can be derived.

Referring next to FIG. 14, the fundamental construction and the mode ofoperation of another embodiment of the photosensor cell in accordancewith the present invention which can be used to construct aphotoelectric converter will be described. FIG. 15(a) shows a wholecircuit of a photoelectric converter comprising a plurality ofphotosensor cell of the type as shown in FIG. 14, some of which areshown by equivalent circuits thereof.

According to the photosensor cell shown in FIG. 14, the readoutoperation and the line refreshing operation can be carried outsimultaneously with the same scanning pulse. While the embodiment shownin FIG. 1 has only one MOS capacitor electrode 9 connected to thehorizontal line 10, in the embodiment shown in FIG. 14, a MOS capacitorelectrode 120 is also connected to the horizontal line 10 and extendsinto a photosensor cell provided contiguously below the photosensor cellin question. As a result, one photosensor cell is of a double capacitorconstruction. The embodiment shown in FIG. 14 is further different fromthe embodiment shown in FIG. 1 in that the emitters 7 and 7' of thevertically adjacent photosensor cells are respectively and alternatelyconnected to the conductor 8 and 121 forming two layers. (FIG. 14 mayappear to show only one vertical line, but that two lines are disposedand isolated from each other with an insulating layer therebetween.)That is, the emitter 7 is connected through a contact hole 19 to theconductor 8 while the emitter 7' is connected through a contact hole 19'to the conductor 121.

These arrangements will become more apparent when reference is made toan equivalent circuit shown in FIG. 15(a). More particularly, a MOScapacitor 150 connected to the base of a photosensor cell 152 isconnected to a horizontal line 31 and a MOS capacitor 151 is connectedto a horizontal line 31'. A MOS capacitor 150' of a photosensor cell152' which is disposed immediately below the photosensor cell 152 isalso connected to the horizontal line 31'.

The emitter of the photosensor cell 152 is connected to a vertical line38 and the emitter of the photosensor cell 152' is connected to avertical line 138. The emitter of a photosensor cell 152" is connectedagain to the vertical line 38. In this manner, the emitters of thephotosensor cells in one column are alternately connected to thevertical lines 38 and 138.

In addition to the differences concerning the unit photosensor cellsdescribed above, the equivalent circuit shown in FIG. 15(a) is furtherdifferent from the circuit of the image pickup device shown in FIG. 7 inthat there are provided a switching MOS transistor 148 for refreshingthe vertical line 138 in addition to a switching MOS transistor 48 forrefreshing the vertical line 38, and a switching MOS transistor 140 forselecting the vertical line 138 in addition to a switching MOStransistor 40 for selecting the vertical line 38. Moreover, anadditional output amplifier system is provided. The output system issuch that the switching MOS transistors 40 and 140 for selecting thevertical lines are connected to the switching MOS transistors 48 and148, respectively. As shown in FIG. 15(b), it is possible to use onlyone output amplifier by using an additional switching MOS transistor 240for horizontal scanning. FIG. 15(b) shows only the vertical lineselection system and the output amplifier system corresponding to thosein FIG. 15(a).

With the photosensor cell as shown in FIG. 14 and the photoelectricconverter as shown in FIG. 15(a), the following operation is possible.That is, during the horizontal blanking period as in a televisionreceiver after the output signals have been read out from thephotosensor cells connected to the horizontal line 31, the output pulseis issued from the vertical shift register 32 and applied to thehorizontal line 31', whereby the photosensor cell 152 for which the readout operation has been finished is refreshed through the MOS capacitor151. At this time, the switching MOS transistor 48 is turned on and thevertical line 38 is grounded.

The output from the photosensor cell 152' is delivered to the verticalline 138 through the MOS capacitor 150' connected to the horizontal line31'. As a matter of course, at this stage, the switching MOS transistor148 is turned off so that the vertical line 138 is floated. As describedabove, in response to a single vertical scanning pulse, the refreshingoperation of a photosensor cell whose output has been read out and thereadout operation of a photosensor cell of the next line can be carriedout simultaneously. Here, the refreshing voltage is desirably differentfrom the readout voltage because in the readout operation, a biasvoltage is added to the readout voltage in order to facilitate thehighspeed readout operation. Therefore, as shown in FIG. 14, the area ofthe MOS capacitor electrode 9 is made different from the area of the MOScapacitor 120 so that even when the same voltage is applied to them,different voltages are applied to the bases of the respectivephotosensor cells.

That is, the area of the refreshing MOS capacitor is made smaller thanthe area of the readout MOS capacitor. When the photosensor cells arerefreshed line by line as in this case instead of simultaneousrefreshing of all photosensor cells, the collector may be composed ofthe n type substrate as shown in FIG. 1(b), but sometimes it ispreferable to provide a separate collector for each horizontal line.When the collector is composed of the substrate, it is apparent that thecollectors of all the photosensor cells form a common region so that acertain bias voltage is applied to the collector in the storage andreadout operations. As previously described, it is of course possiblethat even when a bias voltage is applied to the collectors, therefreshing operation of a floating base can be carried out through anemitter. In this case, however, there is accompanied a drawback thatsimultaneously with the refreshing operation of the base region, a wastecurrent flows between the emitter and the collector of the photosensorcell to which the refreshing pulse has been applied so that the powerconsumption is increased. In order to overcome this drawback, instead ofconnecting in common the collectors of all the photosensor cells, thecollectors of the photosensor cells on each horizontal line areconnected in common but the collectors on the different horizontal linesare made isolated from each other. More specifically, as an explanationin connection with a structure as shown in FIG. 1, the substrate is madeone of p type, and buried n or n⁺ regions which are isolated from eachother are formed for collectors on respective horizontal lines. Thehorizontally adjacent n or n⁺ buried regions may be isolated from eachother by interposing a p region between them. In order to decrease thecapacitance of collectors buried along the horizontal lines, however, itis better to isolate them with an insulating material. In the embodimentshown in FIG. 1, the collectors are composed of a substrate so that theisolation regions surrounding the photosensor cells are formed down toalmost the same depth. In order to isolate the collectors betweenrespective horizontal lines, the isolation regions in the horizontalline direction are desirably made deeper than the isolation regions inthe vertical line direction by a certain value as required.

When the collectors are isolated from each other between horizontallines, by grounding the collectors on each horizontal line after thereadout operation and prior to the refreshing operation, no currentflows between the emitter and collector so that the power consumption isprevented from being increased. When the charge storage operation inresponse to the incident light signal is started after the refreshingoperation, a predetermined bias voltage is applied to the collectorregions again.

As shown in the equivalent circuit of FIG. 15(a), the outputs fromrespective horizontal lines are alternately derived from the outputterminals 47 and 147. As described hereinbefore, when the photoelectricconverter is designed and constructed as shown in FIG. 15(b), theoutputs can be obtained from one amplifier.

As described above, according to the embodiment as shown in FIGS. 14 and15, the line refreshing operation becomes possible so that thephotoelectric converter can be used for such applications as televisioncameras and the like.

As a further embodiment of the present invention, photosensor cell maybe provided with a pluralty of emitters or each emitter is provided witha plurality of contacts so that a plurality of outputs may be derivedfrom a single photosensor cell.

This is possible because each photosensor cell of the photoelectricconverter in accordance with the present invention has an amplificationability so that even if a plurality of conductor capacitances areconnected to each sensor cell in order to derive a plurality of outputsfrom each photosensor cell, it is possible to read out each outputwithout causing any attenuation of the storage voltage Vp produced ineach photosensor cell.

When a photoelectric converter is so designed and constructed as toobtain a plurality of outputs from each photosensor cell as describedabove, various advantages can be obtained from the standpoint of thesignal processing and the countermeasure against noise.

Next, a method for fabricating a photoelectric converter in accordancewith the present invention will be described. FIG. 16 shows the stepsfor fabricating the photoelectric converter by a selected epitaxialgrowth process (as disclosed by N. Endo et al. in "Novel DeviceIsolation Technology with Selected Epitaxial Growth" Tech. Dig. of 1982IEDM, pp 241-244).

A contact n⁺ region 11 is formed by the diffusion of As or P over theback surface of an n type Si substrate 1 with an impurity concentrationof the order of 1-10×10¹⁶ cm⁻³. In order to prevent autodoping from then⁺ region, the back surface of the silicon substrate has been normallyformed with an oxide film or nitride film, while not shown in thefigure.

As the substrate 1, one having a uniformly controlled impurityconcentration and oxygen concentration is used. That is, a uniformcrystal wafer in which the carrier life is sufficiently long is used andsuch wafer can be obtained by, for example, the MCZ process. An oxidefilm is formed to a thickness of the order of 1 micron over the surfaceof the substrate by the wet oxidation process. Thus, oxidation isconducted in the atmosphere of H₂ O or H₂ +O₂. In order to obtain theoxide film without any stacking fault, it is preferable to use ahigh-presure oxidation process at a temperature of the order of 900° C.

Over the oxide film is formed an SiO₂ film of the thickness of, forexample, about 2-4 microns by a CVD process. The SiO₂ film of a desiredthickness may be deposited at a temperature of the order of from 300° to500° C. in a gas system of N₂ +SiH₄ +O₂. The mol ratio of O₂ to SiH₄ isset to a value between 4 and 40 while it depends upon the temperature.Except the portion of the oxide films 4 which serve as isolation regionsbetween cells, the oxide film is removed by a reactive ion ion etchingprocess using a gas such as CF₄ +H₂, C₂ F₆, CH₂ F₂ or the like (see FIG.16(a)). For instance, when a picture element is formed per 10×10 μm²,the SiO₂ film is left in the form of a mesh with a pitch of 10 microns.The width of the SiO₂ film is selected at, for instance, two microns.After damaged and contaminated layers formed during the reactive ionetching process have been removed by an Ar/Cl₂ gas plasma etching or wetetching process, amorphous silicon 301 is deposited by an ultra-highvacuum deposition process, a sputtering process the atmosphere of whichhas been sufficiently made clean by the load lock type or a reducedpressure CVD proces in which the CO₂ laser beam is illuminated on SiH₄gas (see FIG. 16(b)). Thereafter, except the portions deposited over theside surfaces of the SiO₂ layers, the amorphous silicon is removd byanisotropic etching by means of the reactive ion etching process using agas such as CBrF₃, CCl₂ F₂, Cl₂ or the like (see FIG. 16(c)). Afterdamaged and contaminated layers formed in the reactive ion etchingprocess have been sufficiently removed as before, the top surface of thesilicon substrate 1 is sufficiently cleaned and a selective growth of asilicon layer is carried out in a gas system of H₂ +SiH₂ Cl₂ +HCl. Thesilicon layer is grown in a reduced pressure atmosphere of a few tebsTorrs. The temperature of the substrate 1 is maintained between 900° and1000° C. The mol ratio of HCl is set at a relatively high value. If thequantity of HCl is not sufficient, no selective growth occurs. Over thesilicon substrate is formed a silicon crystal layer (epitaxial growthlayer), but a part of the silicon on the SiO₂ layer is etched away byHCl so that no silicon is deposited on the SiO₂ layer (see FIG. 16(d)).The thickness of the n⁻ layer 5 thus formed is, for instance, of theorder of between 3 and 5 microns.

The impurity concentration is preferably set to a value of the order of10₁₂ -10¹⁶ cm⁻³. Of course, the impurity concentration may be lower orhigher than the above-described range, but it is preferable that theimpurity concentration and the thickness of the n⁻ layer are such that acompletely depleted layer is formed due to the diffusion potential ofthe pn junction or at least the n⁻ region is completely depleted when anoperating voltage is applied to the collector.

Ordinarily available HCl gas normally contains a large amount of waterso that an oxide film is always formed over the surface of the siliconsubstrate 1 and consequently high-quality epitaxial growth cannot beexpected at all when such HCl gas is used. When HCl gas containing alarge amount of water is filled into a cylinder, it reacts with thematerials of the cylinder so that it contains a large amount of heavymetals, mainly iron. As a result, an epitaxial growth layer contaminatedwith heavy metals tends to be formed. The epitaxial growth layer whichis used in a photosensor cell preferably has a minimum amount of darkcurrent component so that the contamination with heavy metals should bereduced to a minimum. An ultra pure grade of SiH₂ Cl₂ should be usedand, in addition, HCl containing the least amount of moisture, that is,HCl with a moisture content of not more than 0.5 ppm should be used. Ofcourse, the lesser the content of water, the better. In order to improvethe quality of the epitaxial growth layer, it is effective to heat thesubstrate 1 to a high temperature of 1150°-1250° C. so that the oxygenin the vicinity of the surfaces of the substrate 1 is removed andthereafter, to heat-treat the substrate 1 for a relatively long timeperiod at about 800° C. so as to cause many microdefects, thereby tomake the substrate 1 one having denuded zones which can be subjected tothe intrinsic gettering process. Epitaxial growth is carried out in thepresence of the isolation regions 4 consisting of SiO₂ so that in orderto prevent the imigration of the oxygen from the SiO₂ regions, it ispreferable that the epitaxial growth temperature is as low as possible.In the case of a frequently used high frequency heating process, anepitaxial growth layer is contaminated by a carbon susceptor so that itis difficult to carry out the epitaxial growth at low temperature. Whena process for directly heating wafers by lamps in which no carbonsusceptor is disposed within a reaction chamber is employed, a highlyclean atmosphere can be maintained so that a high-quality epitaxialgrowth layer can be formed at low temperatures.

A wafer supporting member disposed in a reaction chamber preferablyconsists of ultra high purity molten sapphire with a lower vaporpressure. A process for directly heating wafers by lamps is best adaptedfor obtaining a high-quality epitaxial growth layer because startingmaterial gas or gases can be preheated in a relatively simple manner andbecause a uniform temperature distribution can be obtained over thesurface of a wafer even in the presence of a large volume of gas flow sothat thermal stresses hardly occur. When ultraviolet rays are irradiatedat the surfaces of a wafer during the epitaxial growth, the quality ofthe epitaxial growth layer can be further improved.

Amorphous silicon is deposited on the side surfaces of the SiO₂isolation regions 4 (see FIG. 16(c)). Amorphous silicon tends to becomea single crystal during the solid-phase growth so that crystals in thevicinity of the SiO₂ isolation regions 4 are highly excellent inquality. After the high-resistance n⁻ layer 5 has been formed by theselected epitaxial growth process (see FIG. 16(d)), a p region 6 with asurface impurity concentration of 1-20×10¹⁶ cm⁻³ is formed to apredetermined depth by the diffusion of a doped oxide or by thediffusion using as a source a low dose ion injection layer. The depth ofthe p region is, for instance, of the order of 0.6 to 1 micron.

The thickness and the impurity concentration of the p region 6 aredetermined in consideration of the following factors. In order toincrease the sensitivity, it is preferable that the impurityconcentration of the p region 6 is decreased so that the capcitance Cbeis reduced. The capacitance Cbe is roughly given by ##EQU20## where Vbi:the base-emitter diffusion voltage given by ##EQU21## ε: the dielectricconstant of an emitter: N_(D) : the impurity concentration in theemitter;

N_(A) : the impurity concentration of the portion of a base adjacent tothe emitter; and

n_(i) : the intrinsic carrier concentration.

The lower N_(D) is, the lower the capacitance Cbe becomes so that thesensitivity is increased. However, when the impurity concentration N_(A)is made too low, the base region is completely depleted during operationso that punch-through occurs. Therefore, the impurity concentrationN_(A) cannot be made too low. That is, the impurity concentration N_(A)is so determined that the base region will not be completely depletedand no punch-through will occur.

Next, a thermally oxidized film 3 of a thickness ranging from tens tohundreds of A (angstrom) is formed on the surface of the siliconsubstrate 1 by a steam oxidation process using H₂ +O₂ gas at atemperature of about 800° to 900° C. Thereafter, a nitride film (Si₃ N₄)302 of a thickness ranging from 500 to 1500 A is formed over the oxidefilm 3 by a CVD process using SiH₄ +NH₃ gas system. As is the case ofHCl, ordinary commercially available NH₃ gas contains a large amount ofmoisture. If NH₃ gas containing a large amount of moisture is used as astarting material, a nitride film with a high oxygen concentration isformed. Furthermore, reproducibility is adversely affected and an exactselection ratio cannot be attained when it is subjectecd to selectiveetching together with the SiO₂ film.

It is preferable that the water content in NH₃ gas is not more than 0.5pm. As a matter of course, the lesser the moisture content, the better.A PSG film 303 is deposited on the nitride film 302 by a CVD process.For instance, as shown in FIG. 16(e), the PSG film 303 of a thickness ofabout 2000-3000 A is deposited at about 300°-400° C. by a CVD processusing an N₂ +SiH₄ O₂ +PH₃ system. By a photolithography processincluding two mask alignment steps, as As doped polysilicon film 304 isdeposited over the n⁺ region 7 and an electrode to which are applied arefreshing pulse and a readout pulse. In this case, a P dopedpolysilicon film may also be used. For instance, by two photolithographysteps, the PSG film, the Si₃ N₄ film and the SiO₂ film over the emitterare all removed and only the PSG film and the Si₃ N₄ film are etched ata portion where the refreshing and readout pulse application electrodeis disposed while leaving the underlying SiO₂ film. Thereafter, an Asdoped polysilicon film is deposited by a CVD process using an N₂ +SiH₄+AsH₃ gas system or an H₂ SiH₄ +AsH₃ gas system. The depositiontemperature is about 550° to 700° C. and the thickness is about 1000 to2000 A. It is of course possible that after a non-doped polysilicon filmhas been deposited, As or P is diffused into the film. After aphotolithography process including a mask alignment step, thepolysilicon film except for the portions on the emitters and therefreshing and readout pulse application electrodes is removed byetching. When the PSG film is further etched, the polysilicon depositedon the PSG film is removed by lifting-off in a self-alignment manner(see FIG. 16(f)). The polysilicoon film can be etched by using C₂ Cl₂ F₄or CBrF₃ +Cl₂ gas and the Si₃ N₄ film can be etched by using CH₂ F₂ gasor the like.

Next, an insulating film 305 consisting of PSG is deposited in a similarmanner as described above by using a gaseous CVD system and then contactholes are opened to the refreshing and readout pulse applicationelectrode polysilicon film by a masking step followed by an etchingstep. Thereafter, a metal such as Al, Al-Si or Al-Cu-Si is deposited bya vacuum deposition process or a sputtering process, or Al is depositedby a plasma CVD process using (CH₃)₃ Al or AlCl₃ as a starting materialgas or by a light-irradiation CVD process in which an Al--C bond orAl--Cl bond is directly cut off by the irradiation of light. In the caseof the CVD process of the type using (CH₃)₃ Cl or AlCl₃ as a startingmaterial, a largely excessive amount of hydrogen is caused to flow. Inorder to deposite aluminum (Al) into a narrow and steep contact hole, itis superior to employ a CVD process in which the substrate temperture isheated to 300°-400 ° C. in a clean atmosphere containing no moisture andoxygen. After the metal conductor pattern 10 as shown in FIG. 1 has beenmade, an insulating film 306 for isolation between layers is depositedby a CVD process. The insulating film 306 may be composed of theabove-described PSG film or the CVD SiO₂ film or, when the waterresistance must be taken into consideration, may be compoed of an Si₃ N₄film formed by a plasma CVD process using an SiH₄ +NH₃ gas system. Inorder to reduce the water content in the Si₃ N₄ film, the film ispreferably formed by a plasma CVD process using an SiH₄ +N₂ gas system.

In order to reduce damage caused by the plasma CVD process, to increasethe breakdown voltge of a formed Si₃ N₄ film and to decrease a leakagecurrent, the light CVD process is superior to the plasma CVD process.There are two light CVD processes. One is a process wherein anultraviolet ray of 2537 A emitted from an exterior mercury lamp areirradiated to an SiH₄ +NH₃ +Hg gas system and the other is a processwherein an ultraviolet ray of 1849 A emitted from a mercury lamp isirradiated to an SiH₄ NH₃ gas system. In both processes, the substratetemperature is maintained at a temperature of the order of 150°-350° C.A contact hole is opened through the insulating films 305 and 306 to thepolysilicon film on the emitter 7 through a masking step and a reactiveion etching step. Thereafter a metal such as Al, Al-Si, Al-Cu-Si or thelike is deposited in the above described manner. A CVD process issuperior for this purpose since the aspect ratio of the contact hole ishigh. After th metal conductor pattern 8 as shown in FIG. 1 has beenmade, a passivation film 2 consisting of Si₃ N₄ or PSG is deposited by aCVD process (see FIG. 16(g)).

In this case, the use of a light CVD process is superior. A metalelectrode 12 consisting of Al or Al-Si is formed over the back surfaceof the substrate 1.

Various techniques may be employed in order to fabricate thephotoelectric converter in accordance with the present invention andonly one example has been described with reference to FIG. 16.

One of the very important factors of the photoelectric converter inaccordance with the present invention is how the leakage currentsbetween the p region and the n⁻ region 5 and between the p region 6 andthe n⁺ region 7 are decreased to a minimum. It is of course necessarythat the quality of the n⁻ region 5 is improved so that the dark currentis suppressed to a minimum, but a problem to be considered is ratherfound in the interface between the isolation region 4 consisting of anoxide film and the n⁻ region 5. In order to solve this problem, it hasbeen described with reference to FIG. 16 that the epitaxial growth iscarried out after amorphous silicon is deposited on the side surfaces ofthe isolation region 4. In this case, during the epitaxial growth step,amorphous silicon is converted into a single crystal by the solid phasegrowth from the silicon substrate 1. The epitaxial growth step iscarried out at a relatively high temperature between 850° and 1000° C.so that before amorphous silicon is converted into a single crystal bythe solid state growth from the silicon substrate 1, fine crystals areliable to grow in amorphous silicon. As a result, crystal properties aredegraded. When the temperature is low, the rate of solid phase growthbecomes by far relatively higher than the rate at which high crystalsare grown in amorphous silicon. Therefore, prior to the selectedepitaxial growth, amorphous silicon is converted into a single crystalat a low temperature of the order of 550° to 700° C. so that theinterface properties can be improved. In this case, if an oxide film orthe like is present between the silicon substrate 1 and amorphoussilicon, the initiation of the solid phase growth is delayed so that anultra clean process is required so that no such film is present at theinterface between them.

For the solid phase growth of amorphous silicon, in addition to thefurnace growth process as described above, there may be effectivelyemployed a rapid annealing process in which while the silicon substrateis maintained at a predetermined temperature, heating by a flash lamp oran infrared lamp is conducted for a few seconds to tens of seconds. Ifthe rapid annealing process is used, polysilicon may be deposited overthe side surfaces of the SiO₂ region. However, it is necessary that thedeposition is carried out in a very clean atmosphere and polysiliconwhose crystal boundaries are free from oxygen, carbon and the like isused.

After the silicon deposited on the side surfaces of the SiO₂ film hasbeen converted into a single crystal, the selective growth of silicon isinitiated.

When the leakage current at the interface between the SiO₂ isolationregion 4 and the high-resistance n⁻ region 5 is still of problem, theconcentration of n type impurities is preferably increased only at aportion of the high-resistance n⁻ region adjacent to the SiO₂ isolationregion 4 to obviate the problem of the leakage current. For instance,the concentration of n type impurities is increased to 1-10×10¹⁶ cm⁻³ inthe portion of a thickness ranging from 0.3 to one micron of the n⁻region 5 which is adjacent to the SiO₂ isolation region 4. Thisstructure can be realized in a relatively simple manner. That is, afteran oxide film or a thickness of about one micron has been thermallygrown on the surface of the substrate 1, an SiO₂ film containing apredetermined quantity of P is deposited by a CVD process. Thereafter,an SiO₂ film deposited by a CVD process to form the isolation region 4.Next, the substrate 1 is subjected to a high temperature treatment sothat a satisfactory impurity distribution that the impurityconcentration is highest at the interface can be obtained because thephosphorus diffuses from the sandwiched SiO₂ film in the isolationregion 4 into the high-resistance n⁻ region 5. More specifically, astructure as shown in FIG. 17 is composed. The isolation region 4comprises three films, that is, a thermally grown oxide film (SiO₂) 308,an SiO₂ film 309 formed by a CVD process and containing phosphorus P andan SiO₂ film 310 formed by a CVD process. An n region 307 is formed atthe interface between the isolation region 4 and the n⁻ region 5 bydiffusion from the SiO₂ film 309 containing phosphorus P. Then n region307 is formed along the whole periphery of a cell. With this structure,the base-collector capacitance Cbc is increased, but the leakage currentbetween the base and the collector is remarkably decreased.

So far, an example is described with reference to FIG. 16 wherein theselected epitaxial growth is conducted after the isolation region 4 hasbeen formed, it is to be understood however that the U-groove isolationtechnique may also be employed in which a required high resistance n⁻region 5 is epitaxially grown on the surface of the substrate and aportion thereof giving an isolation region is cut in the form of a meshby a reactive ion etching process, thereby forming the isolation region4 (A. Hayasaka et al, "U-groove isolation technique for high speedbipolar VLSI's" Tech. Dig. of IEDM P. 62, 1982).

The photoelectric converter of the present invention, according to theabove described embodiments, is characterized in that a bipolartransistor whose major portion is a floated base region adjacent to asemiconductor wafer surface is formed in a region surrounded by anisolation region composed of an insulating material and the potential ofthe floated base region is controlled by an electrode disposed at a partof the base region through a thin insulating film whereby lightinformation is converted into an electrical signal. An emitter regionwith a high impurity concentration is disposed at a part of the baseregion and is connected to a MOS transistor which is operated inresponse to a horizontal scanning pulse. The above-mentioned electrodedisposed at a portion of the floated base region through a thininsulating film is connected to a horizontal line. The collectordisposed within the wafer may be composed of a substrate or ahigh-impurity-concentration region buried in a high-resistance substratehaving an opposite conductivity type, depending on the purpose. A pulsevoltge applied for reading out the signal is substantially higher than apulse voltage applied for refreshing the floated base region. Actually,a pulse train consisting of pulses having two different voltage levelsmay be used. Moreover, as described in conjunction with the structure ofa double capacitor, the capacitance Co of a readout MOS capacitorelectrode can be made higher than the capacitance Cox of a refreshingMOS capacitor electrode. In response to a refreshing pulse applied, thephotoexcited carriers are stored in the floated base region which hasbeen reverse biased so that the signal corresponding to the light signalis stored. In the signal readout operation, a readout pulse voltage isapplied in such a way that the base-emitter junction is deeply forwardbiased so that the signal can be read out at a high speed. Theabove-described structure and the mode of operation are characteristicfeatures of the present invention. As far as such features as describedabove are retained, the photoelectric converter in accordance with thepresent invention may have any structure and the present invention is ofcourse not limited to the above-described embodiments.

For instance, the photoelectric converter in accordance with the presentinvention may have the same structure as described above, but theconduction types of various regions and films may be reversed. In thiscase, the polarities of voltages applied are also reversed. That is, inan embodiment wherein the conductivity types are reversed, the baseregion is of n type. More particularly, the base region contains As or Pimpurities. When the surface of a region containing As or P is oxidized,As or P is piled up on the side of silicon at the interface betweensilicon and SiO₂. As a result, a strong drift electric field is producedfrom the surface to the interior within the base so that thephotoexcited holes immediately flow into a collector so that electronsare stored in the base in an efficient manner.

In the case where the base is of p type, an ordinarily used impurity isboron. When the surface of a p region containing boron is thermallyoxidized, boron penetrates into an oxide film so that the boronconcentration in the silicon adjacent to the interface between thesilicon and SiO₂ becomes lower than the boron concentration within the pregion. The depth of the transient layer is generally of the order ofhundreds of angstroms (A) while it is dependent upon the thickness ofthe oxide film. A reverse drift electric field for electrons is producedin the vicinity of the interface so that the photoexcited electrons inthis region tend to be collected at the surface. Under these conditions,the region in which the reverse drift electric field is produced canbecome a dead region. According to the present invention, however, an n⁺region is present at a portion along the surface so that the electronscollected at the interface between the silicon and SiO₂ in the p regionare caused to flow into this n⁺ region before the recombination occurs.As a result, even when the number of boron is less at the interfacebetween the silicon and SiO₂ so that the region which has a reversedrift electric filed is present, this region will not become a deadregion. Rather, if such region is present at the interface between, thesilicon and SiO₂, the stored holes are forced to leave the Si/SiO₂interface and move into the interior. As a result, the effect that theholes varnish at the interface is lost so that the effective storage ofholes in the base of the p region can be enhanced. Such phenomena asdescribed above are highly desirable.

Next, a preferred embodiment of the photoelectric converter of thepresent invention which operates in a transient refreshing mode allowinga high-speed refreshing operation will be described. Referring first toFIG. 8(b), the changes in the emitter, base and collector potentiallevels will be explained when a transient refreshing operation, astorage operation and a readout operation are cyclically conducted inthe order named. The voltage levels at various points are externallyviewed so that some of them do not correspond with the internalpotential levels.

For the sake of simplicity of explanation, the diffusion potentialbetween an emitter and a base is not shown. Accordingly, when theemitter potential and the base potential are shown as having the samelevel in FIG. 8(b), a diffusion potential given by the followingexpression exists between the emitter and the base: ##EQU22##

In FIG. 8(b), states 1 and 2 represent a refreshing operation; 3, astorage operation; 4 and 5, a readout operation; and 6, an operationwhen the emitter is grounded. The negative voltage is shown above thezero voltage line while the positive voltage, below the zero voltageline. It is assumed that the base potential be maintained at 0 voltprior to the state 1 and that the collector potential be biased at apositive voltage throughout the states 1-6.

The mode of operation comprising the above mentioned series of stepswill be described with further reference to the timing diagram as shownin FIG. 8(a).

A positive voltage or refreshing voltage V_(RH) is applied to a terminal37 at a time t₁ as shown in a wave form 67 in FIG. 8(a). Then, as shownby a potential level 200 in the state 1 in FIG. 8(b), a distributedvoltage expressed by ##EQU23## is applied to the base as describedbefore. This potential is gradually decreased to zero from t₁ to t₂ andbecomes a potential 201 indicated by a broken line in FIG. 8(b) at t₂.As described before, this potential 201 is a potential V_(k) whichremains at the base in the transient refreshing mode. At t₂, at theinstant when the refreshing voltage or potential V_(RH) returns to zeropotential, a potential given by ##EQU24## is applied to the base due tocapacitance division so that the base potential becomes the sum of theremaining potential V_(k) and a newly produced voltage. That is, thebase potential is maintained at a potential 202 in the state 2 and isexpressed by ##EQU25##

When light is intercepted under the condition that the base is reversebiased with respect to the emitter, holes are generated and stored inthe base region so that, as shown in the state 3, the base potential 202gradually rises to a positive potential as indicated by 203, 203' and203" in response to the intensity of the incident light. The potentialgenerated in response to the incident light is designated by Vp.

Next, when the readout potential V_(R) is applied to a horizontal linefrom a vertical shift register as indicated in a waveform 69, apotential expressed by ##EQU26## is additionally applied to the base. Asa result, when no light is intercepted at all, the base potential 204becomes ##EQU27## As decribed before, the potential 204 is so set thatit is forward biased with respect to the emitter potentially by 0.5-0.6V. The base potentials 205, 205' and 205" are given by ##EQU28##respectively.

When the base potential is forward biased with respect to the emitterpotential as described above, the electrons are injected into the basefrom the emitter so that the emitter potential gradually rises to apositive potential. When no light is intercepted at all, the emitterpotential is of the order of about 50-100 mV when the forward bias isset at 0.5-0.6 V and the read pulse width is 1-2 μs. The emitterpotential is designated by V_(B). The linearity of the emitterpotentials 207, 207' and 207" can be satisfactorly maintained when thepulse width is not less than 0.1 μs. As a result, the emitter potentials207, 207' and 207" are given by

    V.sub.p +V.sub.B, V.sub.p '+V.sub.B, and V.sub.p "+V.sub.B,

respectively.

When the readout potential V_(R) becomes zero after a predeterminedreadout time as indicated in a waveform 69 in FIG. 8(a), a potentialexpressed by ##EQU29## is applied to the base. As a result, as shown inthe state 5, the base potential returns to the potential prior to theapplication of the readout pulse. That is, the base potential is reversebiased so that the emitter potential will not vary. In this case, thebase potential 208 is given by ##EQU30## and the base potentials 209,209' and 209" are given by ##EQU31## respectively. The above potentialsare the same as those indicated in the state 3 prior to the readoutoperation or mode.

In the state 5, the video information signal is read out from theemitter to the exterior. After the readout operation or mode, switchingMOS transistors 48, 48' and 48" are turned on so that the emitter isgrounded and consequently the emitter potential becomes zero asindicated in the state 6. Thus, the refreshing operation, the storageoperation and the readout operation are carried out and the mode returnsto the state 1. Prior to the first refreshing operation, the basepotential has started from zero potential, but after one cycle of therefreshing operation, the storage operation and the readout operation,the base potentials become ##EQU32## Therefore, when the refreshpotential V_(RH) is applied under these conditions, the base potentialsremain V_(k) +V_(p), V_(k) +V_(p) ' and V_(k) +V_(p) ", respectively. Asa result, the base is not satisfactorily forward biased so that theregion which has received high intensity light has been deeply forwardbiased and consequently the video information is removed, but in theregion having received low intensity light, the video information willnot be removed and remains. These facts are clear from the calculateddata with respect to the refreshing operation as shown in FIG. 6.

The above-described phenomenon is unique in the transient refreshingmode and, in the case of the complete refreshing mode, a long refreshingtime is used before the base potential becomes zero so that theabove-described problem will not occur at all.

Next, a first method which uses the transient refreshing mode allowing ahigh-speed refreshing operation and which will not cause such defects asdescribed above will be described below.

A cause of the above defects is that the base potential is too negative,that is, excessively reverse biased with respect to the emitterpotential in the state 6. In the first method for solving the aboveproblem, the base potential 210 is brought to zero potential or causedto rise slightly to a positive potential by some method before a refreshpulse is applied in the state 1 in the subsequent cycle.

FIG. 18(a) is a sectional view of a photosensor cell which can solve theabove-described problem; FIG. 18(b) shows an equivalent circuit thereof;and FIG. 18(c) shows the internal potential.

The photosensor cell as shown in FIG. 18(a) is different from the oneshown in FIG. 1 only in that it includes a buried p⁺ region 220. Theequivalent circuit as shown in FIG. 18(b) further includes a pnptransistor 221 comprising a collector composed of the base region 6 ofthe sensor cell, an emitter composed of the buried p⁺ region 220, and abase composed of a part of the high resistance n⁻ region 5 between thebase region 6 and the collector region 1. The base region of the pnptransistor is loosely coupled to the collector region 1 of the sensorcell as indicated by the broken line in the equivalent circuit. Theburied p⁺ region 220 is connected as indicated by a line 222 in thecrystal so that a voltage can be applied from the exterior of a sensorcell.

As is clear from FIG. 18(b), the p⁺ buried region 220 forms a horizontalline as indicated by 222 so that the p⁺ buried region should be shown ascontinuous in the horizontal direction in FIG. 18(a), but for the sakeof simplicity, the p⁺ buried region 220 is schematically shown as anisland.

The potential with respect to the interior electrons is shown in FIG.18(c) and the potential distribution along a vertical section notincluding buried p⁺ region 220 is substantially similar to the one shownin FIG. 1, but the potential distribution along a vertical sectionincluding the buried p⁺ region is indicated by the broken line curve223. However, it should be noted that FIG. 18(c) shows a potentialdistribution when the buried p⁺ region is slightly biased to a positivepotential. When the buried p⁺ region 220 is further biased positively,the intermediate n⁻ region 5 is completely punched through so that holesflow from the p⁺ region 220 into the base region 6 of the sensor cell.As a result, the base region 6 rises to a positive potential.

In order to maintain the n⁻ region 5 in the punch-through state so thatthe holes flow from the p⁺ region into the p base region 6, thefollowing relationship must be satisfied; ##EQU33## where d is thethickness of the n⁻ region 5,

N is the impurity density,

Vp is the voltage applied to the p⁺ region, and

Vbi is the diffusion potential at the p⁺ -n⁻ junction.

Therefore, in the state 6 as shown in FIG. 8(b), a positive potential isapplied through the line 222 to the buried p⁺ region so that holes areinjected into the p base region 6. As a result, the base potential 210can be brought to zero or a slightly positive potential so that itbecomes possible to solve the defect encountered in the transientrefreshing mode as described above. In this case, if the voltage appliedto the buried p⁺ region is slightly lower than the voltage applied tothe collector 1 of the sensor cell, that is, the buried p⁺ region 220and the n region 1 are not forward biased, a sufficient number of holescan be injected into the base region 6.

An impurity (boron in general) which is injected in order to form the p⁺region 220 has a high diffusion constant. As a result, when the highresistance n⁻ region 5 is formed by the epitaxial process, there arisethe problems of auto doping and diffusion. However, when the epitaxialprocess is carried out at low temperatures, the auto doping anddiffusion from the buried p⁺ region 220 can be reduced to a minimum.

The above-described photosensor cell as an embodiment is different fromthe fundamental photosensor cell as shown in FIG. 1 only in that theburied p⁺ region is formed by the diffusion or ion injection process.Thus, the method for fabricating the fundamental photosensor cell isapplicable to the production of the above embodiment with respect to theother portion than the buried p⁺ region as described above. FIG. 19 is asectional view used to explain further embodiment of the presentinvention. In the photosensor cell as shown in FIG. 19, instead of theburied p⁺ region 220 as shown in FIG. 18(a), a p⁺ region 224 is formedon the side of the top surface simultaneously with the formation of thebase region 6. As a consequence, there is provided a pnp transistorhaving an emitter comprising the p⁺ region 24, a base comprising the lowimpurity n⁻ region 5 and a collector comprising the p⁺ region 6 which isa base of a photosensor cell. Therefore, while the pnp transistor asshown in FIG. 18 has a vertical structure, the pnp transistor as shownin FIG. 19 has a horizontal structure. Accordingly, in the case of theembodiment as shown in FIG. 19, a line 225 along the top surface is usedto apply a voltage to the p⁺ region 224.

Although there is a difference in that the photosensor cell as shown inFIG. 18 has a vertical structure while the photosensor cell as shown inFIG. 19 has a horizontal structure, the equivalent circuit of thephotosensor cell as shown in FIG. 19 is substantially the same as thatshown in FIG. 18(b). Furthermore, the mode of operation of thephotosensor cell as shown in FIG. 19 is quite the same as that of thephotosensor cell as described with reference to FIG. 18.

In FIG. 19, for the sake of explanation, the p⁺ region 224, its line225, the MOS capacitor electrode 9, the emitter region 7 and the line 8are depicted on the same plane, but it is to be understood that the p⁺region 224 and its line 225 may be disposed in other places in the samephotosensor cell. The arrangement of the p⁺ region 224 and the line 225is determined depending upon the design factors such as the shape of alight receiving aperture and the arrangement of various lines.

Another method which uses a transient refreshing mode capable of ahigh-speed refreshing operation and which can substantially eliminatethe above-described problem or defect will be described.

The problem or defect is caused because when a refreshing pulse and areadout pulse are applied, the same potential value produced by thepositive and negative capacitance division at the leading and trailingedges of the pulse is applied to the base region. It follows thereforethat the above-described problem or defect can be solved by clamping anegative voltage applied to the base region at a predetermined value bysome method.

FIG. 20 shows an embodiment capable of accomplishing the above object.FIG. 20(a) shows a section of a sensor cell and FIG. 20(b) shows anequivalent circuit thereof.

The photoelectric converter as shown in FIG. 20(a) is different from thephotosensor cell with the fundamental structure as shown in FIG. 1 inthat there are further provided and an n⁻ region 252 which constitute ap⁺ -n⁺ junction diode, and an SiO₂ isolation region 250 for separatingthese additional regions from photosensor cells 251. The b⁺ region 252is connected through an aluminum conductor 253 to the base region 6 ofthe sensor cell. The p⁺ region 251 is connected through an aluminumconductor 254 to an external power supply. Except the above-describedarrangement, the photosensor cell as shown in FIG. 20 is substantiallythe same in construction as the fundamental sensor cell as shown inFIG. 1. In the equivalent circuit as shown in FIG. 20(b), a p⁺ -n⁺junction diode 255 consisting of the p⁺ region 251 and the n⁺ region 252has an anode (p⁺ region) connected to the line or conductor 254 which inturn is connected to an external power supply and a cathode (n⁺ region)connected to the base of the fundamental photosensor cell. Except theabove-described arrangement, the equivalent circuit as show in FIG.20(b) is substantially the same as that of the fundamental photosensorcell as show in FIG. 1.

In the case of the photosensor cell as shown in FIG. 20, the negativepotential 202 of the base region in a state corresponding to the state 2shown in FIG. 8(b) is maintained at a potential -Vc supplied through theconductor line 254 while, in the fundamental cell, the negativepotential 202 of the base region is ##EQU34## at the trailing edge of arefreshing pulse. That is, when the potential tends to drop below theclamping potential -Vc, the diode 255 is turned on so that the currentflows and the potential is finally clamped at the potential -Vc.

The clamping potential -Vc is determined at a suitable value dependingupon the refreshing speed in the transient refreshing mode, a positivebias in the readout mode, the dynamic range of the light signals and soon.

The clamping potential -Vc is set at a predetermined suitable valuewhich can be obtained by controlling the impurity concentration in then⁺ regions 252 and p⁺ region 251.

In the case of the above-described photosensor cell with the clampingp-n junction diode, the problem or defect caused in the transientrefreshing mode can be reliably solved. As a result, an image pickupdevice capable of high-speed refreshing can be provided.

In the embodiment as shown in FIG. 20, the MOS capacitor electrode 9,the conductor line 8 from the emitter 7, the conductor line 253interconnecting the base 6 and the n⁺ region 252 of the p⁺ -n⁺ junctiondiode and the conductor line 254 for supplying a voltage to the p⁺region 251 of the p⁺ -n⁺ junction diode are all shown as lying on thesame plane for the sake of explanation and correspondingly the lightreceiving apertures are depicted to occupy a remarkably small area, butit is to be understood that these lines can be arranged in variousmanners in the same photosensor cell upon consideration of the shape oflight receiving apertures or windows, convenience in the arrangement ofconductor lines and so on.

Next, a third method which also uses the transient refreshing modecapable of a high-speed refreshing operation and which can substantiallyeliminate the above-described problem or defect will be described.

According to the third method, the base potential 210 at the state 6 inFIG. 8(b) is brought to zero potential. Then, the zero base potential issame as the zero base potential when the refreshing pulse was applied inthe state 1 in FIG. 8(b) so that the positive transient refreshing modeoperation can be ensured.

In FIG. 21 is shown an embodiment of the present invention adapted tocarry out the third method. FIG. 21(a) is a sectional view of aphotosensor cell and FIG. 21(b) shows an equivalent circuit thereof. Theemitter region 7 of the fundamental photosensor cell as shown in FIG. 1and an n⁺ region 270 constitute a drain and source, respectively, of aMOS transistor 273 which is controlled by a gate 271 made of polysiliconor the like. The n⁺ region 270 is connected through a conductor line 272to the base region 6 of the fundamental photosensor cell. Except theabove-described arrangement, the embodiment shown in FIG. 21(a) issubstantially the same in construction as the fundamental photosensorcell shown in FIG. 1.

FIG. 21(b) shows the equivalent circuit of the photosensor cell as shownin FIG. 21(a). The MOS transistor 273 comprising the drain region 7which is in common with the emitter of the photosensor cell, the gate271 and the source region 270 is connected through the conductor line272 to the base region 6 of the photosensor cell. The drain region is incommon with the emitter region and the gate 271 is connected to aconductor line 274 so that a pulse may be applied from the exterior.

In the refreshing operation, the storage operation and the readoutoperation, it is assumed that a negative potential is applied through aconductor line 274 to the gate 271 of the MOS transistor 273 in such away that the channel of the MOS transistor 273 is sufficiently driveninto the nonconduction state. In the case of the state 6 shown in FIG.8(b), when the potential 210 of the base region is maintained at anegative potential, the emitter is grounded. When the gate 271 isbrought to zero potential or is raised to a positive potential underthese conditions, the channel of the MOS transistor is turned on.Therefore, it is clear that a current flows so that the base potentialis brought to zero potential.

As described above, the base potential can be brought to zero in thestate 6 so that, as described with reference to FIG. 8(b), a positivetransient refreshing mode operation can be carried on in the nextrefreshing operation and consequently a highspeed refreshing operationbecomes possible.

In the case of the embodiment shown in FIG. 21, the MOS capacitorelectrode 9, the conductor line interconnecting the source region of theMOS transistor 273 and the base region 6 of the photosensor cell, thegate 271 of the MOS transistor and the conductor line 8 connected to theemitter region 7 of the photosensor cell are all shown on the same planefor the sake of explanation and the light receiving apertures or windowsare depicted to occupy an extremely small area, but it is to beunderstood that in a practical device the above-described componentparts may be suitably arranged in the same photosensor cell uponconsideration of the shape of light receiving apertures or windows,convenience in the arrangement of conductors and so on.

So far, the refreshing operation and the readout operation have beendescribed as being carried out by the electrode 9 on the p base region 6through Cox, but the refreshing operation can also be carried out by thenMOS. In the latter case, a readout pulse is applied to the electrode 9.After the readout operation of one horizontal line has been completed,the refreshing operation of the sensor cells along this horizontal lineis carried out as follows. That is, during a blanking period prior tothe readout from the sensor cells along the next horizontal line, apositive potential is applied to the electrode 271 so that th nMOS isturned on and concurrently a negative voltage -Vp is applied to thevertical lines 38, 38' and so on. The p base region 6 is charged to-(Vp-V_(TH)) and the refreshing operation is completed. V_(TH)designates the threshold voltage of the nMOS. The use of nMOS in thismanner is, so to speak, an operation by which the channel and the n⁺region 270 are driven to the same potential.

A completely independent nMOS may be provided for the refreshing of thep base. In this case, the n⁺ emitter is completely independent andfurther two n⁺ regions 270 and 275 are formed in the p base, whereby annMOS is provided.

As in the case of the embodiment as shown in FIG. 21(a), the n region270 is directly connected through a conductor line to the p base,whereas the other n⁺ electrode 275 is applied with a predeterminednegative voltage -Vp when a voltage is applied to turn on the electrode271. FIG. 22 shows a circuit diagram thereof. Lines 281, 282 and so onare provided along the horizontal lines in order to apply a negativevoltage.

After the readout from the sensor cells along the horizontal line 275has been completed by applying a readout pulse to the horizontal line275, a readout pulse is applied to the next horizontal line 276 forreadout thereabove. Then, the readout pulse is also applied to the gateof the refresh nMOS transistor 273 of each sensor cell along thehorizontal line 275 and a negative voltage -Vp is applied to the line281. As a result, while the readout from the sensor cells along thehorizontal line 275 is carried out, the refreshing is accomplished.

Next, a further embodiment of the present invention which cansubstantially overcome the above described drawbacks and which iscapable of a high-speed refreshing operation will be described.According to the refresh operation described heretofore, a pulse isapplied through the MOS capacitor to the base so as to bring the basepotential to a positive potential. More specifically, when the basepotential is maintained at a positive potential, the base-collectorjunction diode Dbc is turned on so that holes flow out of the base andconsequently the transfer refresh operation is carried out in such a waythat the base potential decreases toward zero potential or the completerefreshing operation is carried out in such a way that the basepotential is completely grounded. In the case of the p base, apredetermined quantity of holes have disappeared from the base so thatwhen the refreshing pulse is removed, the p base is negatively chargedat a predetermined negative voltage.

In contrast thereto, in the embodiments to be described in detail below,the refreshing operation is carried out based on a concept that a MOStransistor is added to each photosensor cell so that a predeterminednegative potential is given by removing the holes which have beenproduced in response to the incident light and stored.

An embodiment will be described in more detail with reference to FIGS.23(a), (b) and (c).

FIG. 23(a) is a plan view of a two-dimensional arrangement of unitphotosensor cells;

FIG. 23(b) is a sectional view taken along the line A-A' of FIG. 23(a);and FIG. 23(c) is a circuit diagram of a two-dimensional arrangement ofunit photosensor cells.

The unit photosensor cell as shown in FIG. 23(a) is substantially thesame in construction as the one shown in FIG. 1 in that there areprovided an emitter region 7, a vertical readout line 8, a contact 19between the emitter region 7 and the vertical readout line 8, a region 6and a MOS capacitor 9.

However, while the MOS capacitor electrode 9 of the embodiment shown inFIG. 1 is used in common in the refreshing and readout operations, theMOS capacitor electrode 9 is used for the readout operation as will bedescribed below, in this embodiment.

This embodiment is different from the embodiment shown in FIG. 1 in thata refreshing p-channel MOS transistor is added to each photosensor cell.More particularly, as best shown in FIG. 28(b), there is provided a pchannel MOS transistor consisting of a p region 6, a p region 220 formedby a diffusion or ion injection process and spaced apart from a p region6 of the photosensor cell, an n doped channel region 225 formed betweenthe p region 6 and the p region 220, an insulating region 3 consistingof an oxide such as SiO₂, and a gate electrode 221. The new p region 220is formed simultaneously with the formation of the p region 6 of thephotosensor cell. The n region 225 serving as the channel between the pregions 6 and 220 is so doped by an ion injection process or the like asto have an increased n type impurity concentration, whereby thepunch-through between the source and the drain may be prevented. Eventhough the number of fabrication steps is somewhat increased, it will beadvantageous that the p region 220 is formed very thin in the vicinityof the surface in order to suppress the punch-through between the sourceand drain.

As shown in FIG. 23(a), the gate 221 of the p channel MOS transistor isconnected to the MOS capacitor electrode 9 and is applied with a pulsethrough a horizontal line 10. The p region 220 serving as the drain ofthe p channel MOS transistor is connected through a contact 222 to ahorizontal line 223.

Therefore, the horizontal line 10, the horizontal line 223 and thevertical line 8 should be formed by a multi-layer wiring technique andinsulated from each other through insulating films.

FIG. 23(c) shows that the p channel MOS transistor having a sourceregion which is in common with the base region of the photosensor celland a gate region which is commonly connected to the conductor 10 isadded to each photosensor cell.

Next, the mode of the embodiment with the above-described constructionwill be described.

Prior to the storage operation in which the photoexcited holes arestored in the base, the base region is negatively biased as indicated bythe state 2 in FIG. 8(b). In the charge storage operation, as indicatedby the state 3, the photoexcited holes are stored in the base region sothat the potential of the base region is increased positively inresponse to the intensity of light. Under these conditions, a readoutpulse V_(R) is applied so that the base potential is brought to apositive potential as indicated by the state 4 and cosequently theinformation stored in the base region is readout into the emitterregion. When the readout pulse voltage V_(R) is grounded, the state 5 ismaintained. The state 5 changes to the state 6 when the information isread out through the vertical line to the exterior and then the emitterregion is grounded through the vertical line 8 as described inconjunction with the above-described embodiments.

As best shown in FIG. 23(c), when a readout pulse is applied to theconductor or horizontal line 10, the information is read out from thephotosensor cell 224. At this time, the same readout pulse issimultaneously applied to the gate of the p channel MOS transistorconnected to a photosensor cell 224'. However, the readout pulse appliedis a positive pulse so that the p channel MOS transistor is not turnedon thereby and consequently the photosensor cell 224' is not influencedat all.

When the potential of the base of each photosensor cell varies dependingupon the intensity of light as indicated by the state 6 in FIG. 8(b). Inresponse to this negative pulse, the p channel MOS transistor is turnedon so that the base potential of the photosensor cell 224' becomes-(V_(SR) -V_(th)) where -V_(SR) is a power supply voltge supplied to theconductor or horizontal line 223 and -V_(th) is the threshold voltage ofthe pMOS transistor.

Next, a photoelectric converter which has a sensitivity higher than thatof the first embodiment as shown in FIG. 1 will be described withreference to FIG. 24.

FIG. 24(a) is a partial plan view of a two-dimensional arangement ofunit photosensor cells each having a plurality of control electrodes;FIG. 24(b) is a sectional view taken along the line A-A' of FIG. 24(a);FIG. 24(c) shows a circuit diagram of the unit photosensor cell; andFIG. 24(d) shows an example of the internal potential distribution alongthe section taken along the line B-B' of FIG. 24(b).

In the case of the first embodiment shown in FIG. 1, the high-resistancen⁻ region 5, the p region 6 and the n⁺ region 7 are formed over the ntype substrate 1 so that the n⁺ pn⁻ n phototransistor is provided, butin the embodiment shown in FIG. 24, these reions are formed over a p⁺substrate 350. That is, the embodiment shown in FIG. 24 is differentfrom the embodiment shown in FIG. 1 in that an n⁺ region 351 is used inplace of the n type substrate 1 of the first embodiment shown in FIG. 1.

The embodiment shown in FIG. 24 has a thyristor structure because afirst phototransistor comprising the n⁺ region 7, the p region 6, the n⁻region 5 and the n⁺ region 351 is overlapped with a secondphototransistor comprising the p region 6, the n⁻ region 5, the n⁺region 351 and the p⁺ region 350. Therefore, the internal potentialstate with respect to electrons can be represented as shown in FIG.24(d) when the abscissa is taken to represent the section from thesurface of the semiconductor toward the interior thereof. When light isincident on the photoelectric converter or unit photosensor cell underthe condition that the p⁺ region of the substrate, is positively biasedthrough the conductor 12 disposed on the back surface of the substrate,holes, of the carriers produced in the interior of the semiconductor inresponse to the incident light, are stored in the p region 6 or the baseof the first phototransistor as described hereinbefore with reference toFIG. 1. At this stage, in the above-described embodiments, the electronsare accelerated by the electric field produced in the high-resistance n⁻region and flown into the substrate 1 as the collector, whereas, in thecase of the embodiment shown in FIG. 24, the n⁺ region 351 forming apotential well for electrons is disposed in front of the substrate p⁺region 350. Thus, the n⁺ region 351 forms a base of the secondphototransistor so that photo-excited electrons are stored therein.

In the case of the CCD type image sensor cell or the MOS type imagesensor cell, electrons, of photoexcited carriers, are stored in a mainelectrode and in the case of the first embodiment shown in FIG. 1, holesare stored in the control electrode region. In this way, ofphoto-excited electron-hole pairs, only one type of carriers are used,but in the case of the embodiment shown in FIG. 24, there are providedtwo control electrode regions so that holes are stored in the controlelectrode region of a first phototransistor while electrons, in thecontrol electrode region of a second phototransistor. Since both typesof carriers produced in response to the incident light are utilized, ahigh degree of sensitivity can be attained as will be described indetail below.

The unit photosensor cell shown in FIG. 24 is different from the oneshown in FIG. 1 in that a refreshing p MOS transistor is added to eachphotosensor cell. More particularly, the p MOS transistor comprising aregion 6 constituting the base of the first phototransistor, a channeldoped n region 353, a p region 354, a gate insulating film 3 and a gateelectrode 352, is provided and is turned on in the case of therefreshing operation so that holes stored in the p region 6 are drawn. Anegative power supply is connected through a conductor 355 and a contacthole 359 to the p region 354 constituting the drain region of the p MOStransistor. The gate electrode 352 is extensitvely extended over the pregion 6 so that a MOS capacitor is provided. Therefore, as is the caseof the first embodiment shown in FIG. 1, the potential of the p region 6is varied in the case of the readout operation.

The n⁺ region 351 constituting the base region of the secondphototransistor is made in contact with a cell isolation region 4 and isextended beyond the surface of the substrate and, as in the case of thefirst phototransistor, a MOS capacitor comprising the insulating film 3and an electrode 356 is formed over the n⁺ region 351. As a consequence,the potential of the n⁺ region 351 constituting the base of the secondphototransistor varies through the MOS capacitor. A pulse is applied tothe MOS capacitor 356 through a conductor 357 and a pulse is applied tothe gate and the MOS capacitor through a conductor 358.

The n⁺ region 7 constituting the emitter of the first phototransistorand the conductor 8 are substantially the same as those described withreference to FIG. 1.

FIG. 24(c) shows a circuit diagram of the photosensor cell of the typejust described above. A transistor 360 represents the firstphototransistor comprising the n⁺ region 7, the p region 6, the n⁻region 5 and the n⁺ region 351; a transistor 361 represents the secondphototransistor comprising the p region 6, the n⁻ region 5, the n⁺region 351 and the p⁺ region 350; a MOS transistor 362 is the p channelMOS transistor comprising the p region 6, the n region 353, the p region354, the gate insulating film 3 and the gate electrode 352; a capacitor363 represents the MOS capacitor comprising the p region 6, theinsulating film 3 and the electrode 352; and a capacitor 364 representsthe MOS capacitor comprising the n⁺ region 351, the insulating film 3and the electrode 356.

Referring next to FIG. 25 showing a circuit diagram of a two-dimensionalarrangement of photosensor cells and FIG. 26 showing pulse waveforms andinternal potentials, the mode of operation of the unit photosensor cellwith the above described construction will be described.

FIG. 25 shows a 2×2 arrangement of the unit sensor cells shown in FIG.24(c), but a vertical shift register, a horizontal shift register, anoutput amplifier, a vertical line refreshing MOS transistor, a verticalline selection MOS transistor and so on which are additionally providedlike those shown in FIG. 7 are not shown. As described hereinbefore, theMOS capacitor 363 and the gate of th p MOS transistor 362 are connectedin common and are applied with a pulse through the horizontal line 358,but it is to be understood that separate lines may be provided so as toapply separate pulses to the MOS capacitor 363 and to the gate of the pMOS transistor 362. A pulse waveform A as shown in FIG. 26 is applied tothe horizontal line 357 while a pulse waveform B is applied to thehorizontal line 358. A waveform C represents the potential of thevertical line 8 and shows that until a time t₄, a MOS transistor (notshown) connected to the vertical line is turned on to maintain groundpotential of the vertical line 8, which is then floated from t₄ so thatthe output signals are divided from the emitter regions of thephotosensor cells. However, in the case of the embodiment shown in FIG.24, it is not essential that the emitter region of each photosensor cellis grounded until t₄ because the refreshing operation is carried out bythe p MOS transistor 362. Therefore, even though the emitter region maybe floated, the operation is not adversely affected at all.

Referring particularly to FIG. 26 showing waveforms and internalpotential diagrams, the mode of operation will be described from time totime. It is assumed that the region 350 constituting the emitter of thesecond phototransistor is connected to a positive power supply throughthe electrode 12 on the back surface of the substrate. In FIG. 26, thetime period from t₁ to t₃ corresponds to the refreshing operation; thetime period from t₃ to t₄ corresponds to the operation for storingphoto-excited carriers; and the time period from t₄ to t₈ corresponds tothe readout operation.

The readout operation is completed at time t₁ and as shown in thepotential diagram at time t₁, holes corresponding to the intensity oflight are stored in the p region 6, i.e., the first base region, whileelectrons corresponding to the intensity of light are stored in the n⁺region 351, i.e., the second base region. At time t₂, as indicated bythe waveform B, a negative pulse is applied through the horizontal line358 to the gate of the refreshing p MOS transistor 362 so that thetransistor 362 is turned on. Therefore, the holes stored in the firstbase region flow out so that as shown at time t₂ of the internalpotential diagram, the first base region is brought to a negativevoltage supplied through the conductor 355. In this case, a negativepulse is simultaneously applied through the MOS capacitor 363 to thefirst base region 6 but, since the p MOS transistor 362 is kept turnedon, the first base region is not influenced at all.

At time t₂, a refreshing pulse is applied through the horizontal line357 and the MOS capacitor 364 to the base region of the secondpototransistor 361 as indicated by the waveform A. The relationshipbetween the applied voltage and the voltage applied to the second baseregion and the refreshing operation are substantially the same as thosedescribed with reference to FIG. 1. That is, as indicated at time t₂ ofthe internal potential diagram, as soon as a pulse is applied, thepotential of the n⁺ region 351 constituting the base and having beenforward biased with respect to the p⁺ region constituting the emitter isgradually moved to the built-in voltage as indicated by the arrow.However, as shown in FIG. 24(b), the area of contact between the n⁺region 351 constituting the base of the second phototransistor and thep⁺ region constituting the emitter of the second phototransistor is verylarge so that the refreshing operation is by far faster than therefreshing operation of the first embodiment described with reference toFIG. 1.

Thereafter, when the voltage applied to the n⁺ region 351 constitutingthe second base region returns to ground potential, the potential of then⁺ region 351 is reverse biased with respect to the p⁺ regionconstituting the emitter of the second phototransistor. This operationis substantially similar to the refreshing operation describedhereinbefore.

From time t₃ to time t₄, carriers produced in response to the incidentlight are stored. As described before, among the carriers produced inresponse to the incident light, holes are stored in the base region ofthe first phototransistor 360 while electrons are stored in the baseregion of the second phototransistor 360. In this case, if the electronsflowing into the emitter region, i.e., the first emitter region, of thefirst phototransistor as well as the electrons slightly varnishing dueto recombination during the travel through a normal resistance regionare neglected, almost equal amounts of charges are stored in the baseregions of the first and second phototransistors. The storage voltage ineach base region is equal to the value obtained by dividing the storedcharge by the sum of the baseemitter capacitance and the base-collectorcapacitance of each phototransistor as described hereinbefore inconjunction with the first embodiment shown in FIG. 1. As describedabove, in the photosensor cell shown in FIG. 24, there are a pluralityof base regions, i.e., control electrodes, but these base regions can beconsidered to function independently and equally while they aredifferent in that either electrons or holes are concerned.

The internal potential diagram shown at time t₄ in FIG. 26 shows thatphoto-excited carriers are stored in respective base regions. At t₄, asindicated in the waveform C, the emitter region of the firstphototransistor is floated and is ready to read out the next signal.

At time t₅, as shown by the waveform A, a pulse is applied through thehorizontal line 357 and the MOS capacitor 364 to the base region of thesecond phototransistor 361 so that, as indicated by the potentialdiagram t₅, the base region is forward biased. As a result, holes areinjected from the emitter region of the second phototransistor (thesecond emitter region) into the base region of the first phototransistorin proportion to the voltage stored corresponding to the intesity oflight. Therefore, in the base region of the first phototransistor, theholes in proportion to the electrons stored in the base region of thesecond phototransistor are added to the holes photo-generated therein.The number of holes injected from the emitter region of the secondphototransistor is dependent upon the time period during which the baseregion of the second phototransistor is forward biased so that a desiredgain can be controlled. Further, in this case, the magnitude and time ofthe forward bias of the base region of the second phototransistor areoptimally controlled so that the linearity of the number of injectedholes may be ensured. The above-described operation principle issubstantially the same as that described in conjunction with the firstembodiment shown in FIG. 1. At time t₆, the voltage applied to the baseregion of the second phototransistor is returned to the initial stateand, as indicated by the internal potential diagram at time t₆, the baseregion of the second phototransistor is reverse biased with respect tothe emitter region thereof as is the case prior to the application ofthe pulse. Thus, the injection of holes is stopped.

At time t₇, as indicated in the waveform B, a voltage is applied throughthe horizontal line 358 and the MOS capacitor 363 to the base of thefirst phototransistor 360 so that the base region of the firstphototransistor is forward biased with respect to the emitter regionthereof. The pulse is positive and a voltage is also applied to the gateelectrode of the p MOS transistor 362 connected in parallel with the MOScapacitor 363. However, the positive voltage is applied so that the pMOS transistor is not turned on and consequently the operation is notadversely affected at all.

Since the first emitter region is in the floating state, when the firstbase region is forward biased, the electrons are injected from theemitter region into the first base region so that the potential of thefirst emitter region varies and consequently the signal voltage storedin the first base region is read out. The above-described operation issubstantially the same as that described above with reference to FIG. 1.However, there occurs a phenomenon that in the case of the embodimentshown in FIG. 24, the electrons which flow out of the first emitterregion are stored in the second base region and, if the electrons aretoo much, a thyristor action partially occurs to cause a furtherincrease in gain. This phenomenon, however, causes the nonlineary of theoutput signal and, therefore, each bias condition is so determined thatthe thyristor action will not occur. It is preferable, however, that thegain is increased by the thyristor action when the photoelectricconverter is applied to usage wherein the linearity is not especiallyneeded.

At time t₈ when the readout operation has been finished, the voltageapplied through the MOS capacitor 363 to the first base region is removdso that, as indicated by the internal potential diagram t₈, the firstbase region is reverse biased with respect to the first emitter regionas is the case prior to the application of the pulse. As a result, theinjection of electrons from the first emitter region to the first baseregion is interrupted. Under these conditions, each output signal isread out on the vertical line and, as described with reference to FIG.7, the horizontal shift register is operated so that each vertical lineis selected so as to deliver the output signal to the exterior throughthe output amplifier. In the embodiment shown in FIG. 24, when holes areinjected into the first base at t₅, the p region 354 of the p MOStransistor is connected to the negative power supply. As a result, thereoccurs a phenomenon that part of the holes are injected into this pregion 354. When the p region 354 is small in size, the quantity ofholes injected therein is not so great and in order to further decreasethe number of holes injected into the p region 354, the SOI (silicon oninsulator) technique may be employed so as to form a p MOS transistor ona cell isolation region. As has been described with reference to FIG. 1,in the refreshing operation and the readout operation, the magnitudes ofthe pulses in the waveforms A and B are determined at optimum values,respectively.

As described above, in the embodiment shown in FIG. 24, there isemployed a system in which both carriers, i.e., photo-excited holes andelectrons, are stored in a plurality of control electrode regions andthen read out respectively while obtaining an increased gain. Thereforethe photoelectric converter with a high degree of sensitivty can beprovided.

In FIG. 27 is shown a further embodiment having a plurality of controlelectrode regions as is the case of the embodiment shown in FIG. 24. Inthe embodiment shown in FIG. 24, the base region of a firstphototransistor is refreshed by means of a p MOS transistor, but in theembodiment shown in FIG. 27, the base region of a second phototransistoris refreshed by means of an n MOS transistor. FIG. 27(a) shows a partialplan view of a two-dimensional arrangement of unit photosensor cells;FIG. 27(b) is a sectional view taken along the line A-A' of FIG. 27(a);and FIG. 27(c) is a diagram of an equivalent circuit of the unit sensorcell.

In FIG. 27, an n MOS transistor 376 is formed in a crystal silicon layerwhich is obtained through recrystallization by the laser beam annealingprocess or the electron beam annealing process from amorphous siliconformed by a sputtering process or from polysilicon by a CVD process on acell isolation region 4. The n MOS transistor comprises an n⁺ region365, an n⁺ region 367, a channel doped p region 366, a gate insulatingfilm 3 and a gate electrode 368. The n⁺ region 365 is connected to an n⁺region 351 constituting the base region of a second phototransistor andthe n⁺ region 367 is connected through a contact hole 371 to a conductor369 so that a positive voltage may be supplied from a positive powersupply. The gate electrode 368 partially extends over the n⁺ region 365so that a MOS capacitor is provided. A pulse is applied to the gateelectrode 368 through a horizontal line 370.

The MOS capacitor comprising the electrode 9 for applying a pulse to thebase region 6 of a first phototransistor for the refreshing and readoutoperations, the insulating film 3 and the base region 6, the n⁺ region 7constituting the emitter region of the first phototransistor, thevertical line 8 for reading out the signal from the n⁺ region 7 and thecontact hole 19 for interconnecting the vertical line 8, the n⁺ region7, etc. are substantially the same as those described with reference toFIG. 1 or 24.

The p region 366 constituting the channel region of the n MOS transistoris connected to the n⁺ region constituting the source region.

In FIG. 27(c) is shown an equivalent circuit of the unit photosensorcell. A first phototransistor 372 comprises the n⁺ region 7, the region6, the n⁻ region 5 and the n⁺ region 351; a second phototransistor 373comprises the p region 6, the n⁻ region 5, the n⁺ region 351 and the p⁺region 350; a MOS capacitor 374 comprises the electrode 9, theinsulating film 3 and the p region 6; another MOS capacitor comprisesthe electrode 368, the insulating film 3 and the n⁺ region 365; and an nMOS transistor 376 comprises the n⁺ region 365, the p region 366, the n⁺region 367, the insulating film 3 and the electrode 368.

FIG. 28 shows a 2×2 arrangement of unit photosensor cells as shown inFIG. 27. A vertical shift register, a horizontal shift register, anoutput amplifier, a vertical line refreshing MOS transistor and avertical line selection MOS transistor all of which are essentially thesame as those described with reference to FIG. 7 are disposed around the2×2 arrangement, but they are not shown in FIG. 28.

The mode of operation of the unit sensor cell as well as the mode ofoperation of the photoelectric converter as shown in FIG. 28 will bedescribed in detail below with reference to FIG. 29 showing pulsewaveforms and internal potential diagrams.

Pulses as shown in a waveform A in FIG. 29 are applied to the horizontalline 370 and pulses in a waveform B in FIG. 29 are applied to thehorizontal line 10. A waveform C represents the potential of thevertical line 8. As shown by the waveform C, until time t₅, a MOStransistor (not shown) connected to the vertical line for refreshing thecharge thereon is kept turned onto maintain the vertical line at groundpotential and, from time t₅, the vertical line is floated so that thesignal from the emitter region of each photosensor cell is read out.

The mode of operation will be sequentially described from time to timewith reference to the pulse waveforms and the internal potentialdiagrams. In FIG. 29, the time period from t₁ to t₄ corresponds to therefreshing operation; the time period from t₄ to t₅ corresponds to theoperation for storing photo-excited carriers; and the time period fromt₅ to t₈ corresponds to the signal readout operation. When a negativevoltage pulse is applied through the horizontal line 370 at time t₁ asindicated by the waveform A, a negative potential is applied through theMOS capacitor 375 to the base region of the second phototransistor 373so that, as indicated by the internal potential diagram t₁, the baseregion is brought to a negative potential and is forward biased withrespect to the emitter region of the second phototransistor 373.Consequently, holes are injected into the base region from the emitterregion so that the potential of the base region of the firstphototransistor is charged toward a positive potential. In this case, asdescribed hereinbefore, the potential of the second base region isgraudally changed from the forward biased state toward the built-involtage. As described with reference to FIG. 1, the holes are injectedinto the first base region at this time point so as to bering thepotential of the first base region to a positive potential so that thetransient refreshing operation can be carried out more positively.

When this negative pulse is applied, the negative pulse is also appliedto the n MOS transistor 376 because the MOS capacitor 375 and the gateof the n MOS transistor 376 are connected in common, but the n MOStransistor remains turned off so that the operation is not adverselyaffected.

At time t₂, the negative pulse returns to ground potential as indicatedby the waveform A. At the instant when the negative potential of thesecond base is returned to ground potential, as indicated by theinternal potential diagram at time t₂, the second base region is reversebiased with respect to the second emitter region so that the injectionof holes from the second emitter region is interrupted.

At time t₃, a positive pulse is applied through the conductor 370 to thegate region of the n MOS transistor 376 so that the transistor 376 isturned on. As a result, the potential of the second base region becomesequal to a positive potential supplied from a positive power supplythrough the vertical line 369. At this time, the positive pulse is alsoapplied to the MOS capacitor 375, but the operation is not adverselyaffected. At time t₃, as indicated by the waveform B, a positivepotential is applied to the first base region through the conductor 10and the MOS capacitor 374. As indicated by the internal potentialdiagram t₃, the first base region is forward biased with respect to thefirst emitter region so that the holes flow out of the first base regionand consequently the potential of the first base region is graduallyincreased to the built-in voltage. The above-described operation issubstantially the same as the operation of the first embodiment shown inFIG. 1. The complete refreshing mode or the transient refreshing mode isselected depending upon the application of the photoelectric transistor.In this case, because th second base region is connected through the nMOS transistor to a positive power supply, an ordinary bipolartransistor operation is carried out.

At time t₄, respective pulse potentials are brought back to groundpotential and, as idicated by the internal potential diagram t₄, thefirst and second base regions are reverse biased with respect to theirrespective emitter regions so that the operation for storingphoto-excited carriers is initiated.

As described before, the time period from t₄ to t₅ corresponds to theoperation for storing photo-excited carriers. Of the photo-excitedcarriers, holes are stored in the first base region while elecBtrons arestored in the second base region as descried hereinbefore with referenceto FIG. 24.

The internal potential diagram at time t₅ shows that photo-excitedcarriers are stored in the base regions of the first and secondphototransistors. At time t₅, as indicated by the waveform C, theemitter region of the first phototransistor is floated and is ready toread out the next signal because the MOS transistor 376 connected to thevertical line 369 is turned off. At time t₆, as indicated by thewaveform A, a negative pulse is first applied through the horizontalline 370 and the MOS capacitor 375 to the base region of the secondphototransistor 373 so that, as indicated by the internal potentialdiagram at time t₆, the second base region is forward biased withrespect to the second emitter region. Accordingly, in the base region ofthe first transistor, in addition to the holes generated therein byphoto-excitation, those holes proportional to the charge storedcorresponding to the intensity of light in the second emitter region areinjected as indicated by the arrow and stored. The above-describedoperation is substantially the same as the operation described beforewith reference to FIG. 24.

At time t₇, as indicated by the waveform A, a positive voltage isapplied through the horizontal line 370 to the gate region of the n MOStransistor 367 so that the transistor 376 is turned on. Therefore, thesecond base region is connected through the n MOS transistor 376 and thevertical line 369 to a positive power supply so that the operation ofthe first phototransistor becomes substantially the same as that of thebipolar transistor described with reference to FIG. 1. Furthermore, attime t₇, as indicated by the waveform B, the signal readout operationcarried out by applying a positive voltage to the first base regionthrough the horizontal line 10 and the MOS capacitor 374 issubstantially the same as that described with reference to FIG. 1 sothat further explanation is omitted. Moreover, the explanation of theinternal potential diagram t₈ shall not be made because the operationindicated by this potential diagram is substantially the same as thatdescribed with reference to FIG. 1.

As described above, the embodiment described with reference to FIGS. 27,28 and 29 is different from the embodiment as shown in FIG. 24 in thatthe operation substantially the same as that described with reference toFIG. 1 can be carried out without the fear of undesirable thyristoraction in the readout operation. Yet, a photoelectric converter with ahigh degree of sensitivity can be provided as is the case of theembodiment described before with reference to FIG. 24.

In FIG. 30 is shown a diagram of an equivalent circuit of a unitphotosensor cell of the present invention in which a refreshing p MOStransistor of the type as shown in FIG. 24 is added to the base regionof a first phototransistor while a refreshing n MOS transistor is addedto the base region of a second phototransistor.

The embodiment as shown in FIG. 30 has a structure substantiallyidentical to a combination of the structures shown in the plan andsectional views in FIGS. 24 and 27 so that a plan view and a sectionalview of the embodiment of FIG. 30 is not shown. In FIG. 31 is shown a2×2 two-dimensional arrangement of a photoelectric converter, but itsperipheral devices of the types described before are not shown.

FIG. 32 shows waveforms applied to respective lines and internalpotential diagrams. In FIG. 32, a waveform A is applied through ahorizontal line 377 to the gate region of a p MOS transistor 381 and aMOS capacitor 382; a waveform B is applied through a horizontal line 378to the gate region of an n MOS transistor 385 and a MOS capacitor 386;and a waveform C representrs the potential of a vertical line 8 as isthe case of the embodiment described hereinbefore.

Further, it is assumed that the vertical line 379 is connected to anegative power supply and the vertical line 380 a positive power supply,respectively.

In the embodiment as shown in FIGS. 30 and 31, the readout operationcarried out during the time period from t₄ to t₆ is substantially thesame as that of the embodiment described with reference to FIG. 27. Theembodiment shown in FIGS. 30 and 31 is different from the previouslydescribed two embodiments in the refreshing operation. That is, at timet₂, both the p MOS and n MOS transistors 381 and 385 are simultaneouslyturned on so that the hole flow out of the first base region andelectrons flow out of the second base region and consequently therefreshing operation can be accomplished in an extremely simple manner.

Therefore, while the waveform C shows that the emitter region of thefirst phototransistor 383 is grounded, but it is not necessary in therefreshing operation to ground the emitter region of the firstphototransistor. In other words, the emitter of the firstphototransistor 383 may be maintained in any desired state.

In the cases of the embodiments described above with reference to FIGS.24, 27 and 30, by using a photosensor cell of a thyristor structurecomprising two main electrode regions of opposite conduction types andtwo control electrode regions disposed adjacent to the respective mainelectrode regions and having conductive types respectively opposite tothose of the main electrode regions, of photo-excited electron-holepairs, holes are stored in a first control electrode region whileelectrons are stored in a second control electrode region. Therefore,these embodiments have a significant feature as compared with aphotoelectric converter of the type in which, of photo-excited carriers,only holes or electrons are utilized. Thus, a photoelectric converterwith a high degree of sensitivity is provided.

Hereinaabove, photoelectric converters of the type capable of amplifyingthe photo-excited carriers within themselves have been described withreference to some embodiments. The structures described so far are thosein which the photo-excited carriers are generated within a singlecrystal, but it is to be understood that, as will be described in detailbelow, there may be provided a structure in which a readout transistoris disposed in a single crystal, an amorphous or a polycrystalline layeris provided on the surface of the single crystal, and a transistor onlyfor receiving light is provided by the use of the amorphous orpolycrystallinne layer at a position corresponding to and above thereadout transistor.

A typical embodiment of such photoelectric converter as described aboveis shown in FIG. 33. FIG. 33(a) is an internal plan view of a unitphotosensor cell showing a substantial part thereof including a readouttransistor disposed within a single crystal; FIG. 33(b) is a sectionalview taken along the line A-A' of FIG. 33(a); and FIG. 33(c) shows atwo-dimensional arrangement of such cells. The plan view shown in FIG.33(a) is essentially the same as that shown in FIG. 1(a) except that ap⁺ region 401 constituting the collector of a light receiving transistoris disposed within an amorphous layer formed on a single crystal inwhich is disposed a readout transistor. The p⁺ polysilicon region 401 isconnected through a contact hole 410 to a p region constituting the baseof the readout transistor. In an actual cell structure, an amorphoussilicon layer is formed over the surface of the p+ polysilicon region401 as best shown in FIG. 33(b). A high-resistance region 402 has such alow impurity concentration that it becomes completely a depletion layerduring the oepration. From a fundamental point of view, thehigh-resistance region 402 may be either an n⁻ region or a p⁻ region asare the cases of the above-described embodiments. An n region 403 and ap⁺ region 404 correspond to the base and emitter regions, respectively,of the light receiving transistor. The n region 403 is floated and thepotential of the n region 403 is controlled by a MOS capacitorcomprising an electrode 407, an insulating layer 406 of SiO₂ or the likeand the n region 403. It is preferable that the p⁺ region has animpurity concentration of the order of 1×10²⁰ cm⁻³ or higher. Theimpurity concentration of the n region 403 is preferably of the order of1-50×10¹⁷ cm⁻³ so that no punch-through occurs during the operation. Thethickness of the high-resistance region 402 is so determined that adesired light-sensitivity sectrum distribution can be obtained.Isolation region 405 of the light-receiving-transistor is made of SiO₂,Si₃ N₄, a nondoped silicon or a combination thereof. A thin insulatingoxide film 406 is formed on the amorphous layer and an insulating film408 consists of a PSG film or a SiO₂ film formed by a CVD proces. Atransparent electorde 409 is made of SnO₂, In₂ O₃, InTiO (ITO) or thelike and may be disposed to cover all the surface of the cells. Theconductors 8 and 10 have been described as mainly consisting ofaluminum, but in the case of the embodiment as shown in FIG. 33, theseconductors 8 and 10 are covered with an amorphous silicon film and the nregion 403 and the p⁺ region 404 are formed thereabove so that theseconductors 8 and 10 are required to be made of a material capable ofwithstanding a high-temperature process. Therefore, these conductors aregenerally made of a metal having a high melting point such as Mo and Wor a highly heat-resistant conductive material such as MoSi₂, WSi₂,TiSo₂ or TaSi₂. The electrode may be made of aluminum or an alloy mainlyconsisting of aluminum. For the sake of simplicity in explanation, theelectrode 407 is assumed to further serve as a conductor.

In FIG. 33(c) is shown an equivalent circuit of the two-dimensionalarrangement of photosensor cells as shown in FIG. 33(a) and (b).

Next, the mode of operation of the embodiment shown in FIG. 33 will bedescibed. The fundamental mode of operation is substantially the same asthat described above so that it will be described in a simple manner.

First, the refreshing operation will be described. A negative pulse isapplied through the conductor 407 to the MOS capacitor 410 so that thejunction between the p⁺ region 404 and n region is forward biased. As aresult, electrons excessively stored in the n region 403 flow out andthe n region 403 is charged to a predetermined positive voltage.Concurrently, holes flow out from the p⁺ region 404 into the p⁺ regionso that the holes are stored in the p region 6. Thereafter, a positivepulse is applied to the conductor so that the p region 6 is set to apredetermined negative voltage. Then the photosensor cell starts theoperation for storing photo-excited carriers. Holes photo-excited in thehigh-resistance region 402 flow into the p⁺ region 401 while electronsflow into the n region 403. These carriers, i.e., the holes andelectrons, are therefore stored in respective regions as an opticalsignal corresponding to the incident light signal. Next, the readoutoperation is started. First, a negative pulse is applied to theconductor 407 so that the junction between the p⁺ region 404 and the nregion 403 is forward biased by, for instance, 0.5-0.65 V. Then, duringa pulse width of 1-0.1 microsecond, the holes, the number of which is inproportion to the charge of electrons photo-excited in thehigh-resistance region 402 and stored in the n region 403, flow out ofthe p region 404 into th p⁺ region 401. That is, not only the holesdirectly generated in response to the incident light but also the holesin an amount proportional to the photo-excited electrons are stored inthe p region 6. After the holes in proportion to a light signal arestored in the p region 6 by utilizing the internal amplificationfunction, a positive readout voltage is applied through the conductor 10to the electrode 9 of the MOS capacitor 411 so that the voltage signalin proportion to the light signal is read out through the vertical line8. The above operation has been already described in detailhereinbefore. In the photoelectric converter in accordance with thepresent invention, a readout voltage is high so that an amplifier can bemade simple in construction and the divisional readout operation can becarried out in a simple manner as described above. The same positivevoltage may be applied to the electrodes 12 and 409, but differentpositive voltages may be applied as the case may be.

In FIG. 33, the p region 6 constituting the base of the readouttransistor 413 and the n region 403 constituting the base of the lightreceiving transistor 412 are both floated. It is to be understood that,as already described, a structure in which a MOS transistor having the pregion 6 as a main electrode is provided, a structure in which a MOStransistor having the n region 403 as a main electrode or a combinationof these, can be adopted in such a structure where a readout transistorand a light receiving transistor are isolated from each other. This isdescribed below with reference to FIGS. 34, 35 and 36. FIG. 34 shows anembodiment in which a p MOS transistor 414 is provided in order torefresh the p base of a readout transistor 413. A negative voltage isapplied to one main electrode of the transistor 414. A negative voltageis applied to the gate of the refreshing p MOS transistor 414 foroperation. Therefore, both the p MOS transistor 414 and the readouttransistor 413 can be driven in common by the horizontal line 10.

In an embodiment shown in FIG. 35, an n region 403 constituting the baseof a light receiving transistor 412 is used as a main electrode of an nMOS transistor 415 for the refreshing operation. In the refreshingoperation of the n MOS transistor 415, a positive pulse voltage isapplied to the gate thereof so that the gate can be driven in commonwith the high receiving transistor 412 by the horizontal line 407. Apredetermined positive voltage (which is higher than the positivepotential applied to an electrode 409) is applied to the other mainelectrode of the n MOS transistor 415.

In FIG. 36, refreshing MOS transistors 416 and are respectivelyconnected to the p region 6 constituting the base of the light receivingtransistor 414. The mode of operation of the embodiment as shown in FIG.36 is substantially the same as that described hereinbefore.

The above embodiment in which transistors composed by using amorphoussilicon has an advantage that because the effective light receiving areacan be made larger and because amorphous silicon has a high band gap of1.7-1.8 eV, the sensitivity to light rays with short wavelengths becomeshigh.

The conductors which are buried or embedded in the interior are made ofthe above-described metals having a high melting point or silisidesthereof. A PSG film, a SiO₂ formed by a CVD process or an SiO₂ filmformed by a sputtering process may be overlaid on the conductors. Whenit is desired that an insulating film is flattened, an SiO₂ film isformed through a sputtering process in the final step. This is effectedwithin a same vacuum chamber for forming films by changing the voltage(DC bias) between the sputter electrodes whereby the modes are switchedfrom one for formation of an SiO₂ film over a sample to one forsputtering of the SiO₂ film. Thereafter, the contact hole 410 is openedand then a p⁺ polysilicon film is deposited by a CVD process. Then,after a patterning step, a high-resistance amorphous silicon film isdeposited to a desired thickness of, for instance, 2-7 microns. Thedeposition of an amorphous silicon film may be carried out by a lowtemperature deposition process in an ultra-high vacuum, by a sputteringprocess in an atmosphere of, for instance, Ar or by a CVD process(including plasma CVD processes) using SiH₄ or Si₂ H₆. Furthermore, aMOCVD process using an organic metal source gas may be employed. Afterthe insulating isolation n region 405 has been formed, the n region 403and the p⁺ region 404 are formed by a diffusion or ion injectionprocess.

As described above, the photoelectric converter of the present inventionis basically characterized in that photo-excited carriers are stored ina floated base region which is a control electrode region so that it maybe called Base Store Image Sensor abbreviated to "BASIS".

Particularly photoelectric converters of the type as shown in FIGS. 26,29 and 32 have two control electrode regions in which carriers arestored, respectively, so that they may be called Double Base Store ImageSensors, abbreviated to "D.BASIS".

As described in detail with reference to various embodiments, thephotoelectric converter in accordance with the present invention has mayadvantageous features as follows. One picture element is constituted byone transistor so that a high density of picture elements can be easilyattained. Because of its structure, blooming and smearing can be reducedto a minimum and a high sensitivity can also be attained. A considerbalywide dyanmic range can be secured. Because of a self-amplificationcapaciblity, a high signal voltage can be produced without dependingupon the conductor capacitance. A low noise characteristic is attained,and peripheral circuits can be made simple in construction. Thus, theindustrial value of the photoelectric converter in accordance with thepresent invention is very high, for instance, as a high-qualitysolid-state image sensor in the future.

In addition to the solid state image sensors, the photoelectricconverter in accordance with the present invention may be applied toimage input devices such as facsimiles, work stations, digital copiers,word processors and the like; OCRs; bar code readers; and photoelectricconversion type object detecting devices used in automatic focusingsystems of cameras, video cameras and 8 mm movie cameras.

What is claimed is:
 1. A photoelectric converter comprising a photosensor element, said photosensor element comprising:a transistor includinga first semiconductor region having a first conductivity type, a first conductor, and an ohmic contact layer disposed between the first semiconductor region and the first conductor and comprising a semiconductor having the same conductivity type as and a higher impurity concentration than the first semiconductor region, a second semiconducor region disposed contiguous to the first semiconductor region, the second semiconductor region having the same conductivity type as and a lower impurity concentration than the first semiconductor region, a third semiconductor region disposed contiguous to the second semiconductor region and having a different conduct type from that of the second semiconductor region, an electric insulating region disposed contiguous to the third semiconductor region, and a second conductor connected to the electrically insulating region; the third semiconductor region, the electrically insulating region and the second conductor in combination being arranged to constitute a capacitor; and a fourth semiconductor region disposed contiguous to the third semiconductor region and having a different conductivity type from that of the third semiconductor region, and a third conductor; whereby said third semiconductor region is in a floating state so that the third semiconductor region stores a charge generated by photoexcitation by controlling the potential of the third semiconductor region through said electrically insulating region, an electric signal corresponding to the charge stored in the third semiconductor region is read out from the third conductor, and then the stored charge is refreshed through the third conductor.
 2. The photoelectirc converter according to claim 1, wherein a fourth conductor different from said second conductor is connected to said electrically insulating region.
 3. The photoelectric converter according to claim 1, wherein said second semiconductor region is at least partially surrounded by a fifth semiconductor region, said fifth semiconductor region having the same conductivity type as that of and a higher impurity concentration than that of the second semiconductor region.
 4. The photoelectric converter according to claim 1, wherein a fifth semiconductor region having the same conductivity type as that of said third semiconductor region is buried in said first semiconductor region.
 5. The photoelectric converter according to claim 1, wherein a fifth semiconductor region having the same conductivity type as that of said third semiconductor region is disposed laterally from the third semiconductor region through said second semiconductor region.
 6. The photoelectric converter according to claim 1, wherein a diode is connected to said third semiconductor region through a fourth conductor.
 7. The photoelectric converter according to claim 6, wherein said diode is a pn junction diode.
 8. The photoelectric converter according to claim 1, wherein said photosensor element further comprises an insulated-gate type transistor having a drain region constituted by said fourth semiconductor region.
 9. The photoelectric converter according to claim 1, wherein said photosensor element further comprises a MOS transistor having a source region constituted by said third semiconductor region.
 10. The photoelectric converter according to claim 1, wherein said fourth semiconductor region has a thickness in the depth direction of from 0.2 to 0.3 micron or less.
 11. The photoelectric converter according to claim 1, wherein said fourth semiconductor region has an impurity concentration of 1×1020 cm³ or above.
 12. The photoelectric converter according to claim 1, wherein said fourth semiconductor region has a distribution of impurity concentration decreasing from the side of the light incidence surface toward the opposite side.
 13. The photoelectric converter according to claim 1, wherein said third semiconductor region has a distribution of impurity concentration decreasing from the side of the light incidence surface toward the opposite side.
 14. The photoelectric converter according to claim 1, wherein said fourth semiconductor region is grounded when the charge is stored in said third semiconductor region.
 15. The photoelectric converter according to claim 1, wherein said fourth semiconductor region is floated when the charge is stored in said third semiconductor region.
 16. A photoelectric converter comprising a multiplicity of photosensor elements disposed in a matrix of rows and columns in a semiconductor body, each photosensor element comprising:a transistor includinga first semiconductor region having a first conductivity type, a first conductor, and an ohmic contact layer disposed between the first semiconductor region and the first conductor and comprising a semiconductor having the same conductivity type as and a higher impurity concentration than the first semiconductor region, a second semiconductor region disposed contiguous to the first semiconductor region, the second semiconductor region having the same conductivity type as and a lower impurity concentration than the first semiconductor region, a third semiconductor region disposed contiguous to the second semiconductor region and having a different conductivity type from that of the second semiconductor region, an electrically insulating region disposed contiguous to the third semiconductor region, and a second conductor connected to the electrically insulating region; said third semiconductor region, said electrically insulating region and said second conductor in combination being arranged to constitute a capacitor; and a fourth semiconductor region disposed contiguous to the third semiconductor region and having a different conductivity type from that of the third semiconductor region, and a third conductor; said multiplicity of photosensor elements being isolated from each other with respect to their essential parts by element isolation regions, whereby said third semiconductor region is in a floating state so that the third semiconductor region stores a charge generated by photoexcitation by controlling the potential of the third semiconductor region through said electrically insulating region, an electric signal corresponding to the charge stored in the third semiconductor region is read out from the third conductor, and then the stored charge is refreshed through the third conductor.
 17. The photoelectric converter according to claim 16, wherein a fourth conductor different from said second conductor is connected to said electrically insulating region.
 18. The photoelectric converter according to claim 16, wherein said second semiconductor region is at least partially surrounded by a fifth semiconductor region, said fifth semiconductor region having the same conductivity type as that of and a higher impurity concentration than that of the second semiconductor region.
 19. The photoelectric converter according to claim 16, wherein a fifth semiconductor region having the same conductivity type as that of said third semiconductor region is buried in said first semiconductor region.
 20. The photoelectric converter according to claim 16, wherein a fifth semiconductor region having the same conductivity type as that of said third semiconductor region is disposed laterally from the third semiconductor region through said second semiconductor region.
 21. The photoelectric converter according to claim 16, wherein a diode is connected to said third semiconductor region through a fourth conductor
 22. The photoelectric converter according to claim 21, wherein said diode is a pn junction diode.
 23. The photoelectric converter according to claim 16, wherein said photosensor element further comprises an insulated-gate type transistor having a drain region constituted by said fourth semiconductor region.
 24. The photoelectric converter according to claim 16, wherein said photosensor element further comprises a MOS transistor having a source region constituted by said third semiconductor region.
 25. The photoelectric converter according to claim 16, wherein said fourth semiconductor region has a thickness in the depth direction of from 0.2 to 0.3 micron.
 26. The photoelectric converter according to claim 16, wherein said fourth semiconductor region has an impurity concentration of 1×10²⁰ cm⁻³ or above.
 27. The photoelectric converter according to claim 16, wherein said fourth semiconductor region has a distribution of impurity concentration decreasing from the side of the light incidence surface toward the opposite side.
 28. The photoelectric converter according to claim 16, wherein said third semiconductor region has a distribution of impurity concentration decreasing from the side of the light incidence surface toward the opposite side.
 29. The photoelectric converter according to claim 16, wherein said fourth semiconductor region is grounded when the charge is stored in said third semiconductor region.
 30. The photoelectric converter according to claim 16, wherein said fourth semiconductor region is floated when the charge is stored in said third semiconductor region.
 31. A photoelectric converter comprising a photosensor element which in turn comprises a first transistor and a second transistor,said first transistor including a first conductor, a first semiconductor region connected to the first conductor, a second semiconductor region, a high-resistivity third semiconductor region, and a fourth semiconductor region, and said second transistor including said said second semiconductor region, said high-resistivity third semiconductor region, said fourth semiconductor region, a fifth semiconductor region, and a second conductor connected to the fifth semiconductor region, said first semiconductor region and said fifth semiconductor region having conductivity types different from each other, said second semiconductor region having a different conductivity type from that of the first semiconductor region and being disposed contiguous to said first semiconductor region, said fourth semiconductor region having a different conductivity type from that of the fifth semiconductor region and being disposed contiguous to said fifth semiconductor region, said high resistivity third semiconductor region being disposed between said second and fourth semiconductor regions and electrically connecting said second and fourth semiconductor regions, one of said second and fourth semiconductor regions functioning to store holes of electron-hole pairs generated by photo-excitation and the other to store electrons.
 32. The photoelectric converter according to claim 31, wherein said first semiconductor region has the conductivity type of n+, and said fifth semiconductor region has the conductivity type of p⁺.
 33. The photoelectric converter according to claim 31, wherein said second semiconductor region has the conductivity type of p.
 34. The photoelectric converter according to claim 31, wherein said high-resistivity third semiconductor region is an n⁻ region.
 35. The photoelectric converter according to claim 31, said photosensor element further comprises an insulated-gate type transistor, said insulate-gate type transistor comprising:said second semiconductor region, a sixth semiconductor region having the same conductivity type as that of the second semiconductor region and disposed spaced apart from the second semiconductor region, a seventh semiconductor region disposed between the second and sixth semiconductor regions, having a different conductivity type from that of the second and sixth semiconductor regions and electrically connecting the second and sixth semiconductor regions, an electrically insulating region disposed on said seventh semiconductor region, and a third conductor disposed above said seventh semiconductor region through said electric insulating region.
 36. The photoelectric converter according to claim 35, wherein said third conductor extends above said second semiconductor region along with said electrically insulating layer so that it has a function of controlling the potential of the second semiconductor region.
 37. The photoelectric converter according to claim 36, wherein the portions of the third conductor and the electrically insulating region extending above the second semiconductor region constitute a MOS capacitor in combination with the second semiconductor region below the third electrode.
 38. The photoelectric converter according to claim 35, wherein said electrically insulating region extends above said fourth semiconductor region and a fourth conductor is disposed on the extending portion of the electrically insulating region.
 39. The photoelectric converter according to claim 38, wherein the fourth conductor, the portion of the electrically insulating region extending above the fourth semiconductor region and the fourth semiconductor region below the second electrode, in combination, form a MOS capacitor.
 40. The photoelectric converter according to claim 35, wherein said second, sixth and seventh semiconductor regions are all disposed in said high-resistivity third semiconductor region.
 41. The photoelectric converter according to claim 31, wherein said high-resistivity third semiconductor region is disposed in said fourth semiconductor region.
 42. The photoelectric converter according to claim 31, wherein said first semiconductor region is disposed in said second semiconductor region.
 43. The photoelectric converter according to claim 38, wherein said fourth conductor has a function of controlling the potential of said fourth semiconductor region.
 44. The photoelectric converter according to claim 31, wherein said photosensor element further comprises an insulated-gate type transistor connected to said fourth semiconductor region.
 45. The photoelectric converter according to claim 44, wherein said insulated-gate type transistor is an n-channel MOS transistor.
 46. A photoelectric converter comprising a multiplicity of photosensor elements disposed in a matrix of rows and columns in a semiconductor body, each photosensor element comprising:a first transistor including a first conductor, a first semiconductor region connected to the first conductor, a second semiconductor region, a high-resistivity third semiconductor region, and a fourth semiconductor region, and a second transistor including said second semiconductor region, said high resistivity third semiconductor region, said fourth semiconductor region, a fifth semiconductor region, and a second conductor connected to the fifth semiconductor region, said first semiconductor region and said fifth semiconductor region having a conductivity types different from each other, said second semiconductor region having a different conductivity type from that of the first semiconductor region and being disposed contiguous to said first semiconductor region, said fourth semiconductor region having a different conductivity type from that of the fifth semiconductor region and being disposed contiguous to said fifth semiconductor region, said high-resistivity third semiconductor region being disposed between said second and fourth semiconductor regions and electrically connecting said second and fourth semiconductor regions, one of said second and fourth semiconductor regions functioning to store holes of electron-hole pairs generated by photo-excitation and the other to store electrons.
 47. The photoelectric converter according to claim 46, wherein said first semiconductor region has the conductivity type of n⁺, and said fifth semiconductor region has the conductivity type of p⁺.
 48. The photoelectric converter according to claim 46, wherein said second semiconductor region has the conductivity type of p.
 49. The photoelectric converter according to claim 46, wherein said high-resistivity third semiconductor region is an n⁻ region.
 50. The photoelectric converter according to claim 46, wherein said photosensor element further comprises an insulated-gate type transistor, said insulated-gate type transistor comprising:said second semiconductor region, a sixth semiconductor region having the same conductivity type as that of the second semiconductor region and disposed spaced apart from the second semiconductor region, a seventh semiconductor region disposed between the second and sixth semiconductor regions, having a different conductivity type from that of the second and sixth semiconductor regions and electrically connecting the second and sixth semiconductor regions, an electrically insulating region disposed on said seventh semiconductor region, and a third conductor disposed above said seventh semiconductor region through said electrically insulating region.
 51. The photoelectric converter according to claim 50, wherein said third conductor extends above said second semiconductor region along with said electrically insulating region so that it has a function of controlling the potential of the second semiconductor region.
 52. The photoelectric converter according to claim 51, wherein the portions of the third conductor and the electrically insulating region extending above the second semiconductor region constitue a MOS capacitor in combination with the second semiconductor region below the third conductor.
 53. The photoelectric converter according to claim 50, wherein said electrically insulating region extends above said fourth semiconductor region and a fourth conductor is disposed on the extending portion of the electrically insulating region.
 54. The photoelectric converter according to claim 53, wherein the fourth conductor, the portion of the electrically insulating region extending above the fourth semiconductor region and the fourth semiconductor region below the second electrode, in combination, form a MOS capacitor.
 55. The photoelectric converter according to claim 50, wherein said second, sixth and seventh semiconductor regions are all disposed in said high-resistivity third semiconductor region.
 56. The photoelectric converter according to claim 46, wherein said high-resistivity third semiconductor region is disposed in said fourth semiconductor region.
 57. The photoelectric converter according to claim 46, wherein said first semiconductor region is disposed in said second semiconductor region.
 58. The photoelectric converter according to claim 53, wherein said fourth conductor has a function of controlling the potential of said fourth semiconductor region.
 59. The photoelectric converter according to claim 46, wherein said photosensor element further comprises an insulated-gate type transistor connected to said fourth semiconductor region.
 60. The photoelectric converter according to claim 59, wherein said insulated-gate type transistor is an n-channel MOS transistor.
 61. A photoelectric converter comprising a photosensor element, said photosensor element comprising:a first transistor including a first and a second semiconductor region respectively having a first conductivity type, a first and a second conductor connected to the first and second semiconductor regions, respectively, anda third semiconductor region having a second conductivity type opposite to the first conductivity type and being in a floating state; a second transistor includinga fourth semiconductor region having said second conductivity type and directly connected to said third semiconductor region, a fifth semiconductor region having said second conductivity type, a third conductor connected to the fifth semiconductor region, and a sixth semiconductor region having said first conductivity and being in a floating state; and a fourth conductor connected to said sixth semiconductor region through an electrically insulating layer so as to control the potential of the sixth semiconductor region.
 62. The photoelectric converter according to claim 61, wherein a first high resistivity semiconductor region is interposed between said first and third semiconductor regions.
 63. The photoelectric converter according to claim 61, wherein a second high resistivity semiconductor region is interposed between said fourth and sixth semiconductor regions.
 64. The photoelectric converter according to claim 63, wherein said second high resistivity semiconductor region is a region where charge carriers are generated through photo-excitation.
 65. The photoelectric converter according to claim 64, wherein, of the charge carriers photo-generated in said second high resistivity regions, one polarity of carriers are stored in said third semiconductor region and the other polarity of carriers are stored in said sixth semiconductor region.
 66. The photoelectric converter according to claim 1, wherein said fourth semiconductor region has the same conductivity type as that of said first semiconductor region.
 67. The photoelectric converter according to claim 16, wherein said fourth semiconductor region has the same conductivity type as that of said first semiconductor region.
 68. The photoelectric converter according to claim 1, wherein said fourth semiconductor region has a surface area smaller than that of said first semiconductor region.
 69. The photoelectric converter according to claim 16, wherein said fourth semiconductor region has a surface area smaller than that of said first semiconductor region.
 70. The photoelectric converter according to claim 1, wherein said fourth semiconductor region is highly doped.
 71. The photoelectric converter according to claim 16, wherein said fourth semiconductor region is highly doped.
 72. The photoelectric converter according to claim 1, wherein said fourth semiconductor region is a high resistivity semiconductor region.
 73. The photoelectric converter according to claim 16, wherein said fourth semiconductor region is a high resistivity semiconductor region.
 74. A photoelectric conversion process comprising the steps of:(A) providing a photoelectric converter comprising:a transistor includinga first semiconductor region having a first conductivity type, a first conductor, and an ohmic contact layer disposed between the first semiconductor region and the first conductor and comprising a semiconductor having the same conductivity type as and a higher impurity concentration than the first semiconductor region, a second semiconductor region disposed contiguous to the first semiconductor region, the second semiconductor region having the same conductivity type as and a lower impurity concentration than the first semiconductor region, a third semiconductor region disposed contiguous to the second semiconductor region and having a different conductivity type from that of the second semiconductor region, an electrically insulating region disposed contiguous to the third semiconductor region, and a second conductor connected to the electrically insulating region; said third semiconductor region, said electrically insulating region and said second conductor in combination being arranged to constitute a capacitor; and a fourth semiconductor region disposed contiguous to the third semiconductor region and having a different conductivity type from that of the third semiconductor region, and a third conductor; (B) sequentially and cyclically conducting the following stages of operations: (a) Charge Storage Operation, comprisingsetting the following initial conditions wherein:the first semiconductor region is held at a reverse polarity of voltage, the third semiconductor region is biased to a reverse polarity of voltage, and the fourth semiconductor region is grounded or floated and illuminating the photosensor element with incident light to store a charge corresponding to the incident light in the third semiconductor region, (b) Readout Operation, comprisingholding the fourth semiconductor region in a floating state and forward biasing the third semiconductor region to output an electrical signal corresponding to the charge in the third semiconductor region; and (C) Refreshing Operation, comprisingholding the first semiconductor region at a ground potential or a reverse polarity of voltage, holding the fourth semiconductor region at ground potential, and applying a forward polarity of voltage to the third semiconductor region to remove a charge remaining corresponding the photogenerated charge in the third semiconductor region. 